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ON Semiconductor NCP1060 Manual

High-voltage switcher for low power offline smps
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NCP1060, NCV1060,
NCP1063, NCV1063
High-Voltage Switcher for
Low Power Offline SMPS
The NCP106X products integrate a fixed frequency current mode
controller with a 700 V MOSFET. Available in a PDIP−7, SOIC−10 or
SOIC−16 package, the NCP106X offer a high level of integration,
including soft−start, frequency−jittering, short−circuit protection,
skip−cycle, adjustable peak current set point, ramp compensation, and a
Dynamic Self−Supply (eliminating the need for an auxiliary winding).
Unlike other monolithic solutions, the NCP106X is quiet by nature:
during nominal load operation, the part switches at one of the available
frequencies (60 kHz or 100 kHz). When the output power demand
diminishes, the IC automatically enters frequency foldback mode and
provides excellent efficiency at light loads. When the power demand
reduces further, it enters into a skip mode to reduce the standby
consumption down to a no load condition.
Protection features include: a timer to detect an overload or a
short−circuit event, Overvoltage Protection with auto−recovery and
AC input line voltage detection (A version).
The ON proprietary integrated Over Power Protection (OPP) lets
you harness the maximum delivered power without affecting your
standby performance simply via external resistors.
For improved standby performance, the connection of an auxiliary
winding stops the DSS operation and helps to reduce input power
consumption below 50 mW at high line.
NCP106x can be seamlessly used both in non−isolated and in
isolated topologies.
Features
Built−in 700 V MOSFET with R
11.4 W (NCP1063)
Large Creepage Distance Between High−voltage Pins
Current−Mode Fixed Frequency Operation – 60 kHz or 100 kHz
(130 kHz on demand)
Adjustable Peak Current: see below table
Fixed Ramp Compensation
Direct Feedback Connection for Non−isolated Converter
Internal and Adjustable Over Power Protection (OPP)
Circuit
Skip−Cycle Operation at Low Peak Currents Only
Dynamic Self−Supply: No Need for an Auxiliary
Winding
Internal 4 ms Soft−Start
Auto−Recovery Output Short Circuit Protection with
Timer−Based Detection
Auto−Recovery Overvoltage Protection with Auxiliary
Winding Operation
Frequency Jittering for Better EMI Signature
© Semiconductor Components Industries, LLC, 2017
September, 2017 − Rev. 6
of 34 W (NCP1060) and
DS(on)
1
www.onsemi.com
8
1
16
CASE 751B−05
1
D SUFFIX
10
CASE 751BQ
1
AD or BD SUFFIX
x = Power Switch Circuit On−state Resistance
(0 = 34 W, 3 = 11.4 W)
x =
f = Brown In (A = Yes, B = No)
yyy = Oscillator Frequency
yyy =
(060 = 60 kHz, 100 = 100 kHz)
z = P (standard) or V (automotive)
u = blank (standard) or V (automotive)
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G or G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 28 of this data sheet.
No Load Input Consumption < 50 mW
Frequency Foldback to Improve Efficiency at Light
Load
NCV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change
Requirements; AEC−Q100 Qualified and PPAP
Capable
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Auxiliary / Standby Isolated and Non−isolated Power
Supplies
Power Meter SMPS
Wide Vin Low Power Industrial SMPS
MARKING DIAGRAMS
7
PDIP−7
P106xfyyy
CASE 626A
AWL
AP SUFFIX
YYWWG
1
16
SOIC−16
NCz1063fyyyG
AWLYWW
1
10
SOIC−10
u1060fyyy
ALYWX
G
1
Publication Order Number:
NCP1060/D

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Summary of Contents for ON Semiconductor NCP1060

  • Page 1 = blank (standard) or V (automotive) = Assembly Location Features L, WL = Wafer Lot • of 34 W (NCP1060) and Built−in 700 V MOSFET with R DS(on) Y, YY = Year 11.4 W (NCP1063) W, WW = Work Week •...
  • Page 2 NCP1060, NCV1060, NCP1063, NCV1063 PRODUCT INFORMATION & INDICATIVE MAXIMUM OUTPUT POWER 230 Vac + 15% 85 − 265 Vac Adapter Open Frame Adapter Open Frame Product DS(on) IPK(0) 34 W NCP1060 60 kHz 300 mA 3.3 W 8.3 W 1.9 W 4.7 W...
  • Page 3 NCP1060, NCV1060, NCP1063, NCV1063 Table 2. TYPICAL APPLICATIONS • If the output voltage is above 9.0 V typ. between level and V CC(ON) level − VCC supplied from output via D2 • R2 limits maximal output power • Direct feedback, resistive...
  • Page 4 NCP1060, NCV1060, NCP1063, NCV1063 Table 2. TYPICAL APPLICATIONS • VCC supplied from DSS • Output voltage is below 9.0 V typ. • LIM/OPP pin floating − no limit output power • Resistive divider formed by R2, R3 sets output volt- •...
  • Page 5 NCP1060, NCV1060, NCP1063, NCV1063 DRAIN UVLO 80− ms Filter Reset Management OFF UVLO pflag Line LineOK Detection recovery UVLO LineOK Jittering COMP(REF ) Sawtooth COMP (up) Sawtooth Foldback COMPskip SKIP Ramp compensation SKIP = ”1” è Shut down some blocks to reduce consumption...
  • Page 6 NCP1060, NCV1060, NCP1063, NCV1063 Table 3. MAXIMUM RATING TABLE (All voltages related to GND terminal) Rating Symbol Value Unit Power supply voltage, V pin, continuous voltage −0.3 to 20 Voltage on all pins, except Drain and V Vinmax −0.3 to 10...
  • Page 7 2 (5) CC(min) decreasing level at which the switcher stops operation (UVLO) 2 (5) CC(off) Internal IC consumption, NCP1060 switching at 60 kHz, LIM/OPP = 0 A 2 (5) − 0.92 − Internal IC consumption, NCP1060 switching at 100 kHz, LIM/OPP = 0 A −...
  • Page 8: Internal Oscillator

    NCP1060, NCV1060, NCP1063, NCV1063 Table 4. ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T = −40°C to +125°C, V = 14 V unless otherwise noted) Symbol Rating Unit CURRENT COMPARATOR Final switch current with a primary slope of 200 mA/ms,...
  • Page 9: Temperature Management

    NCP1060, NCV1060, NCP1063, NCV1063 Table 4. ELECTRICAL CHARACTERISTICS (For typical values T = 25°C, for min/max values T = −40°C to +125°C, V = 14 V unless otherwise noted) Symbol Rating Unit COMPENSATION SECTION Positive Active Clamp (Guaranteed by design)
  • Page 10: Typical Characteristics

    NCP1060, NCV1060, NCP1063, NCV1063 TYPICAL CHARACTERISTICS 9.15 7.52 7.50 9.10 7.48 7.46 9.05 7.44 9.00 7.42 7.40 8.95 7.38 7.36 8.90 7.34 8.85 7.32 −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 4. V vs. Temperature Figure 5. V vs.
  • Page 11 NCP1060, NCV1060, NCP1063, NCV1063 TYPICAL CHARACTERISTICS −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 10. I vs. Temperature Figure 11. I vs. Temperature IPK(0)1060 IPK(0)1063 −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 12. I vs. Temperature Figure 13. I vs.
  • Page 12 NCP1060, NCV1060, NCP1063, NCV1063 TYPICAL CHARACTERISTICS 60.0 59.5 59.0 58.5 58.0 57.5 57.0 56.5 56.0 55.5 −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 16. f vs. Temperature Figure 17. f vs. Temperature OSC60 OSC100 −40 −20 −40 −20 TEMPERATURE (°C)
  • Page 13 NCP1060, NCV1060, NCP1063, NCV1063 TYPICAL CHARACTERISTICS −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 22. t vs. Temperature Figure 23. t vs. Temperature recovery 18.2 18.1 18.0 17.9 17.8 17.7 17.6 17.5 17.4 −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C)
  • Page 14 NCP1060, NCV1060, NCP1063, NCV1063 TYPICAL CHARACTERISTICS 1.075 NCP1063 1.05 1.025 0.975 NCP1060 0.95 0.925 −50 −25 −50 −25 , JUNCTION TEMPERATURE (°C) TEMPERATURE (°C) Figure 28. Drain Current Peak during Transformer Figure 29. Breakdown Voltage vs. Temperature Saturation vs. Junction Temperature...
  • Page 15 B version doesn’t incorporate this line current−mode control architecture. detection and let the device start as soon as voltage • 700 V –_ Power MOSFET: Due to ON Semiconductor supply reaches V start(min). • Very High Voltage Integrated Circuit technology, the Frequency jittering: an internal low−frequency...
  • Page 16 NCP1060, NCV1060, NCP1063, NCV1063 Application Information Startup Sequence When the power supply is first powered from the mains pulses are delivered by the output stage: the circuit is awake outlet, the internal current source (typically 8.0 mA) is and activates the power MOSFET if the bulk voltage is biased and charges up the V capacitor from the drain pin.
  • Page 17 NCP1060, NCV1060, NCP1063, NCV1063 9.0 V 7.5 V Device Internal Pulses CCTH TIME (ms) Startup Duration Figure 31. The Charge/Discharge Cycle Over a 1 mF V Capacitor As one can see, even if there is auxiliary winding to provide duration (400 ms typically). Then a new start−up...
  • Page 18 NCP1060, NCV1060, NCP1063, NCV1063 Fault Condition – Output Short−circuit asserted, Ipflag, indicating that the system has reached its As soon as V reaches V , drive pulses are maximum current limit set point. The assertion of this flag CC(on) internally enabled. If everything is correct, the auxiliary triggers a fault counter t (48 ms typically).
  • Page 19 NCP1060, NCV1060, NCP1063, NCV1063 Drain = 9.0 V CC (on ) start 1 = 7. 5 V CC (min ) limit Shut down Internal DRV 80 ms filter Figure 33. A more detailed view of the NCP106X offers better insight on how to properly wire an auxiliary winding...
  • Page 20 NCP1060, NCV1060, NCP1063, NCV1063 CCON 0V (fresh PON) Max Ip Drain current 4 ms Figure 35. The 4 ms Soft−start Sequence Jittering Frequency jittering is a method used to soften the EMI sawtooth is internally generated and modulates the clock up signature by spreading the energy in the vicinity of the main and down with a fixed frequency of 300 Hz.
  • Page 21 NCP1060, NCV1060, NCP1063, NCV1063 Frequency Foldback The reduction of no−load standby power associated with Below this value, the peak current setpoint is frozen to 30% the need for improving the efficiency, requires to change the of the I . The only way to further reduce the transmitted PK(0) traditional fixed−frequency type of operation.
  • Page 22 NCP1060, NCV1060, NCP1063, NCV1063 NCP1060 NCP1063 [mA] COMP ≥ 285 mA) Figure 39. Ipk set−point is frozen at lower power demand (I LMOP Feedback and Skip this linear operating range, the dynamic resistance is Figure 40 depicts the relationship between COMP pin 17.7 kW typically (R...
  • Page 23 NCP1060, NCV1060, NCP1063, NCV1063 Jittering DRV stage Foldback COMP(REF) COMPskip COMP(UP) SKIP CS comparator COMP Figure 41. Skip Cycle Schematic Ilimit and OPP Function The function makes the integrated circuit more flexible. The current drawn out of LIM/OPP pin defines the current set point.
  • Page 24 NCP1060, NCV1060, NCP1063, NCV1063 winding MOSFET Vramp + Vsense COMP to CS setpoint COMP OPPU LMDEC Freeze pk(0 ) 25 mA 250 mA LIM/ OPP LMOP LMOP LMDEC OPPL Figure 43. The OPP Circuitry Affects the Maximum Peak Current Set Point Ramp Compensation and Ipk Set−point...
  • Page 25 NCP1060, NCV1060, NCP1063, NCV1063 max = 265 Vac or 375 Vdc COMP (REF ) = 12 V COMP (up ) = 5 W Operating mode is CCM COMP COMP η = 0.8 1. The lateral MOSFET body−diode shall never be forward biased, either during start−up (because of...
  • Page 26 NCP1060, NCV1060, NCP1063, NCV1063 where K + Lavg and defines the amount of ripple we want in CCM (see Figure 47). • Small K: deep CCM, implying a large primary inductance, a low bandwidth and a large leakage inductance. •...
  • Page 27 NCP1060, NCV1060, NCP1063, NCV1063 9. If the NCP106X operates at DSS mode, then the ) N @ (V ) @ t valley bulk (eq. 7) losses caused by DSS mode should be counted as 6 @ T losses of this device on the following calculation: 0.0464 @ (127 ) 100) @ 10 n...
  • Page 28 NCP1060, NCV1060, NCP1063, NCV1063 Power Dissipation and Heatsinking The NCP106X welcomes two dissipating terms, the DSS Jmax ambmax (eq. 10) current−source (when active) and the MOSFET. Thus, P . It is mandatory to properly manage the MOSFET which gives around 870 mW for an ambient of 50°C and a heat generated by losses.
  • Page 29: Package Dimensions

    NCP1060, NCV1060, NCP1063, NCV1063 PACKAGE DIMENSIONS PDIP−7 (PDIP−8 LESS PIN 6) CASE 626A ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
  • Page 30 0.25 BSC PLANE END VIEW SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 1.00 0.58 PITCH 6.50 1.18 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com...
  • Page 31 FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized...

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