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Panasonic Transistors 2SC5846 Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC5846
P
T
C
a
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140
Ambient temperature T
I
V
C
BE
120
= 10V
V
CE
100
80
= 75°C
T
a
60
25°C
40
20
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage V
h
I
FE
C
350
= 75°C
T
a
300
25°C
250
–25°C
200
150
100
50
0
1
10
100
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
50
= 25°C
T
a
40
30
20
10
0
0
2
( °C )
Collector-emitter voltage V
a
3.5
V
CE
= 25°C
T
a
3.0
2.5
–25°C
2.0
1.5
1.0
0.5
0
1.0
1.2
0
( V )
Base-emitter voltage V
BE
10
= 10V
V
CE
1
1 000
0
( mA )
Collector-base voltage V
I
V
C
CE
= 160 µA
I
B
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
4
6
8
10
12
( V )
CE
I
V
B
BE
= 10V
0.2
0.4
0.6
0.8
( V )
BE
C
V
ob
CB
f = 1 MHz
= 25°C
T
a
8
16
24
32
40
( V )
CB
SJC00298AED
I
I
C
B
140
= 10V
V
CE
= 25°C
T
a
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
( mA )
Base current I
B
V
I
CE(sat)
C
1
I
/ I
C
= 75°C
T
a
0.1
–25°C
25°C
0.01
1
10
( mA )
Collector current I
C
1.0
= 10
B
100

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