Download Print this page

Panasonic Transistors 2SC5632G Specifications page 2

Transistors silicon npn epitaxial planar type

Advertisement

2SC5632G
 T
P
C
a
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
1
−1
10
T
= 85°C
a
25°C
−25°C
−2
10
−3
10
−1
10
1
10
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
60
40
20
0
120
160
0
(°C)
Collector-emitter voltage V
a
C
200
I
/ I
= 10
C
B
160
120
80
40
0
2
10
1
(mA)
Collector current I
 V
I
C
CE
T
= 25°C
a
= 300 µA
I
B
250 µA
200 µA
150 µA
100 µA
50 µA
2
4
6
8
(V)
CE
 I
h
FE
C
V
= 4 V
CE
T
= 85°C
a
25°C
−25°C
2
10
10
(mA)
C
SJC00369AED
 V
I
C
BE
120
V
CE
25°C
80
T
= 85°C
a
−25°C
40
0
0
0.4
0.8
Base-emitter voltage V
BE
 V
C
ob
CB
2.5
f = 1 MHz
T
a
2
1.5
1
0.5
0
1
10
Collector-base voltage V
CB
= 4 V
1.2
(V)
= 25˚C
2
10
(V)

Advertisement

loading