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Panasonic Transistors 2SC4805G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC4805G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
10
1
0.1
0.01
0.001
0.1
1
10
Collector current I
C
 V
C
ob
CB
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
30
25
20
15
10
5
0
0
120
160
( °C )
Collector-emitter voltage V
a
C
240
= 10
I
/ I
C
B
200
160
= 75°C
T
a
25°C
120
−25°C
80
40
0
100
0.1
( mA )
12
= 0
I
E
f = 1 MHz
= 25°C
T
a
10
8
6
4
2
0
100
0.1
( V )
Collector current I
CB
 V
I
C
CE
= 25°C
T
a
= 250 µA
I
B
200 µA
150 µA
100 µA
50 µA
2
4
6
8
10
12
( V )
CE
 I
h
FE
C
= 8 V
V
CE
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
Collector current I
C
 I
G
UM
C
= 8 V
V
CE
f = 1.5 GHz
= 25°C
T
a
1
10
100
( mA )
C
SJC00367AED
 V
I
C
BE
120
V
CE
100
25°C
80
= 75°C
−25°C
T
a
60
40
20
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage V
BE
 I
f
T
C
12
= 8 V
V
CB
f = 1.5 GHz
= 25°C
T
a
10
8
6
4
2
0
1
10
( mA )
Collector current I
C
NF  I
C
6
= 8 V
V
CE
f = 1.5 GHz
= 25°C
T
a
5
4
3
2
1
0
0.1
1
10
( mA )
Collector current I
C
= 8 V
1.0
1.2
( V )
100
100

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