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Panasonic Transistors 2SC4562G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC4562G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
100
10
1
= 75°C
T
a
25°C
0.1
−25°C
0.01
1
10
100
Collector current I
C
 V
C
ob
CB
6
5
4
3
2
1
0
1
10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
120
100
80
60
40
20
0
120
160
0
( °C )
Collector-emitter voltage V
a
C
= 10
600
I
/ I
C
B
500
400
300
200
100
0
1 000
0.1
( mA )
Collector current I
= 0
I
E
f = 1 MHz
= 25°C
T
a
100
( V )
CB
 V
I
C
CE
= 25°C
T
a
= 300 µA
I
B
250 µA
200 µA
150 µA
100 µA
50 µA
2
4
6
8
10
12
( V )
CE
 I
h
FE
C
= 10 V
V
CE
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
C
SJC00366AED
 V
I
C
BE
60
V
CE
25°C
50
40
= 75°C
T
a
30
−25°C
20
10
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage V
BE
 I
f
T
E
600
V
CB
= 25°C
T
a
500
400
300
200
100
0
− 0.1
−1
−10
( mA )
Emitter current I
E
= 10 V
1.0
1.2
( V )
= 10 V
−100

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