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Panasonic Transistors 2SC3938G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC3938G
Measurement circuit
t
, t
test circuit
on
off
220 Ω
= 10 V
V
3.3 kΩ
IN
3.3 kΩ
50 Ω
= −3 V
V
BB
10%
V
IN
10%
V
90%
OUT
t
on
 V
I
C
CE
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
Collector-emitter voltage V
 I
h
FE
C
600
500
400
300
200
= 75°C
T
a
25°C
−25°C
100
0
0.1
1
10
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
t
test circuit
0.1 µF
stg
V
OUT
50 Ω
0.1 µF
= 10 V
V
IN
= 3 V
V
CC
50 Ω
V
90%
V
OUT
t
off
100
= 25°C
T
a
= 3.0 mA
I
B
2.5 mA
10
2.0 mA
1.5 mA
1
1.0 mA
0.5 mA
0.1
0.01
1.0
1.2
0.1
( V )
Collector current I
CE
600
= 1 V
V
CE
500
400
300
200
100
0
−1
100
( mA )
0.1 µF
V
OUT
A
1 kΩ
910 Ω
90 Ω
500 Ω
= 10 V
V
500 Ω
CC
= 2 V
V
BB
10%
IN
10%
t
stg
(Waveform at A)
 I
V
CE(sat)
C
= 10
I
/ I
C
B
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
C
 I
f
T
E
= 10 V
V
CB
= 25°C
T
a
−10
−100
−1 000
( mA )
Emitter current I
E
SJC00364AED
 T
P
C
a
200
160
120
80
40
0
0
20
40
60
80
100
120
Ambient temperature T
a
 I
V
BE(sat)
C
100
10
T
a
1
0.1
0.01
1
10
100
( mA )
Collector current I
C
 V
C
ob
CB
6
= 0
I
E
f = 1 MHz
= 25°C
T
a
5
4
3
2
1
0
1
10
Collector-base voltage V
CB
140
160
( °C )
= −25°C
25°C
75°C
1 000
100
( V )

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