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Panasonic Transistors 2SC3937G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC3937G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
100
10
1
= 75°C, 25°C, −25°C
T
a
0.1
0.01
0.1
1
10
Collector current I
C
 V
C
ob
CB
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
1
10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
60
50
40
30
20
10
0
0
120
160
( °C )
Collector-emitter voltage V
a
C
600
= 10
I
/ I
C
B
500
400
300
200
100
0
0.1
100
( mA )
24
= 0
I
E
f = 1 MHz
= 25°C
T
a
20
16
12
8
4
0
100
0.1
( V )
CB
 V
I
C
CE
= 400 µA
I
= 25°C
T
B
a
350 µA
300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
2
4
6
8
10
12
( V )
CE
 I
h
FE
C
= 8 V
V
CE
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
Collector current I
C
 I
G
UM
C
= 8 V
V
CE
f = 800 MHz
= 25°C
T
a
1
10
100
( mA )
Collector current I
C
SJC00363AED
 V
I
C
BE
120
V
CE
100
25°C
80
= 75°C
−25°C
T
a
60
40
20
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V
BE
 I
f
T
C
12
= 8 V
V
CE
f = 800 MHz
= 25°C
T
a
10
8
6
4
2
0
0.1
1
10
( mA )
Collector current I
C
NF  I
C
6
= 8 V
V
CE
= 50 Ω)
(R
g
f = 800 MHz
5
= 25°C
T
a
4
3
2
1
0
0.1
1
10
( mA )
Collector current I
C
= 8 V
2.0
( V )
100
100

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