Panasonic MA3J741 (MA741) Specifications

Schottky Barrier Diodes (SBD)
MA3J741
Silicon epitaxial planar type
For switching
■ Features
• Mini type of MA3X704A (MA704A)
• Low forward voltage V
• Small temperature coefficient of forward characteristic
• Small reverse current I
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA741)
and good wave detection efficiency η
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 30
F
I 150
FM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R R
C V
t R
t I
rr F
I
rr
η
V
IN
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
Unit
V
1 : Anode
V 2 : N.C.
3 : Cathode
mA
EIAJ: SC-79
mA
Marking Symbol: M1L
°C
Internal Connection
°C
Conditions
= 1 mA
= 30 mA
= 30 V
= 1 V, f = 1 MHz
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V
, f = 30 MHz
(peak)
= 3.9 kΩ, C = 10 pF
L
4. * : t measurement circuit
rr
Input Pulse
t t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00054BED
+0.1
0.3
–0
3
1 2
(0.65) (0.65)
1.3 ±0.1
2.0 ±0.2
5˚
SMini3-F1 Package
3
1 2
Min Typ Max
1.5
1.0
65
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.15
–0.05
0.9 ±0.1
Unit
0.4 V
1.0
300 nA
pF
ns
%
1