EVGA 750i Getting Started page 30

750i Mainboard
M emory Voltage (V)
This item allows you to adjust the memory voltage that can increase the memory
speed.
VTT FSB Voltage (V)
This item allows you to adjust the VTT FSB voltage.
NB Voltage (V)
This item allows you to adjust the North Bridge chipset voltage.
Advance DRAM Configuration
Press <Enter> and the following sub-menu appears.
M emory Timings
This field has the capacity to automatically detect all of the DRAM timing. If you
set this field to [Manual], some fields will appear and selectable.
CAS Latency (CL)
W hen the Memory Timings sets to [Manual], the field is adjustable.This controls
the CAS latency, which determines the timing delay (in clock cycles) before
SDRAM starts a read command after receiving it.
tRCD
When the Memory Timings sets to [Manual], the field is adjustable. When DRAM
is refreshed, both rows and columns are addressed separately. This setup
item allows you to determine the timing of the transition from RAS (row ad-
dress strobe) to CAS (column address strobe). The less the clock cycles, the
faster the DRAM performance.
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