Technical Specifications; General Technical Data; Performance And Technical Characteristics - Sony Ericsson Walkman W200 White Paper

Technical specifications

General technical data

System
Speech coding
GSM SIM/USIM card
Memory (user free)
Data transfer speeds

Performance and technical characteristics

Dimension
Frequency range
(MHz)
Channel spacing
Number of channels
Modulation
TX Phase Accuracy
Duplex spacing
Frequency stability
Voltage operation
(nominal)
Transmitter RF power
output
Transmitter Output
impedance
Tri band GSM phase 2 recommendations. GSM 850, GSM 900, GSM
1800, GSM 1900 and e-GSM supported.
HR, FR, EFR, AMR supported where available, for high speech quality.
Small plug-in card, 1.8V and 3V.
Up to 25 MB internal (depending on software configuration/file
content). Memory Stick Micro™ (M2™) which has a capacity of up to
1 GB.
Up to 85.6 kbps (downlink)
Up to 42.8 kbps (uplink)
GSM 850 GSM 900/E-GSM
(a variant) 900
(i and c variant)
TX: 824 – 849 MHz TX: 880 – 915
RX: 869 – 894 MHz RX: 925 – 960
200 kHz 200 kHz
124 Carriers *8 174 Carriers *8
(TDMA) (TDMA)
8PSK/GMSK GMSK
< 5º RMS Phase < 5º RMS Phase
error (burst) error (burst)
45 MHz 45 MHz
+/- 0.1ppm +/- 0.1ppm
3.6 V 3.6 V
33 dBm Class 4 33 dBm Class 4
(2 W peak) (2 W peak)
50 ohm 50 ohm
GSM 1800
(a, i and c variant)
TX: 1710 – 1785
RX: 1805 – 1880
200 kHz
374 Carriers *8
(TDMA)
GMSK
< 5º RMS Phase
error (burst)
95 MHz
+/- 0.1ppm
3.6 V
30 dBm Class 1
(1 W peak)
50 ohm
23
White paper W200
GSM 1900
(a, i and c variant)
TX:1850 –1910
RX:1930 – 1990
200 kHz
299 Carriers *8
(TDMA)
GMSK
< 5º RMS Phase
error (burst)
80 MHz
+/- 0.1ppm
3.6 V
30 dBm Class 1
(1 W peak)
50 ohm
April 2007