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SEMICONDUCTORS
e IC's
(e
|
1. Input
2: GND
23
3: Output
NJM7805FA
TC74HCTO4P
TC74HCU04P
HD74HCOOP
SN74LS624
CF37606
SM-5828
e IC PROTECTOR
or
ICP-F15
vee [4]
iw put [2]
cno (|
1. Gnd
1Gnd
5
eabacityL'|
2 3
e ee
2 Input
out
one
23
3 Output
|
\
NJM79M05FA
NJM79M12FA
MC7812
M51953B
TC74HCUOOP
TC74HCTO4P
HD74HCOOP
SN74LS624
CF37606
SM-5828
ceRLi]
[26] GNo
ack
in(2 |
WCK
4
we in(3 |
[26]ecK out
so in(a]
$18
oc in(5]
[24]P 19
cno [6]
[23]P 20
cno[7 |
[22]WwCK
OuT
invo +(e]
ferjvcc
inv if]
[2oJwex 2
inv 210]
[ig}sHo 1
sa if]
[ig)sHo 2
SA 2
fi7}so 1
no [13]
i6}so 2
vec [ia]
[iSJoveR
e TRANSISTORS
f
i
E (Emitter)
C (Collector)
ICP-N15
B (Base)
S
28D1913
CXA1081S
|
c8
=
2SA933(Q)
2SC2878(A/B)
2SA1015(Y)
2SC1740(R/S)T-70
NJM4556D
uPC4570C
BA15218
AD1862
oO
i
2SB562(C)
2SD468(C)
M5218L
AD1862
(+) Vcc
Output 2
6] Inverting
Input 2
Non Inverting
Input 2
[4] (-) Vec
Non Inverting
Input 1
Inverting
Input 1
[1] Output 1
AD1862
CXA1372S
(8)
(c)
iNPyr
3A
2
TPUT
i |
1(E)
| 4
GNO
ec
RN1202(10K-10K)NPN
RN2202(10K-10K)PNP
M5059-407SP
OUT
GNO
NJM78L05A
CXD2500Q
e DIODES
=I
¢—
1S2076A
1SS270A
1SR35-200A
—_fq—
HZ7C-2
HZ33L-3
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