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Kit Contents; Specification; Device Information - Texas Instruments TPS1213Q1EVM User Manual

Evaluation module for smart high-side driver

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Evaluation Module Overview
1 Evaluation Module Overview
1.1 Introduction
This user's guide describes the TPS1213-Q1 evaluation module (EVM). This guide provides configuration
information, test setup details and contains the EVM schematics, bill of materials, assembly drawings, and top
and bottom board layouts.

1.2 Kit Contents

Item
TPS1213Q1EVM

1.3 Specification

6-V to 36-V (typ) operation
Current sensing using MOSFET VDS
Programmable load wakeup threshold

1.4 Device Information

The TPS1213-Q1 is a 45-V low IQ smart high side driver with protection and diagnostics. With wide operating
voltage range of 3.5 V–40 V, the device is an excellent choice for 12-V system designs. The device can
withstand and protect the loads from negative supply voltages down to –40 V. The device has integrated two
gate drives with 1.69-A src/2-A sink capacity to drive MOSFETs in the main path and 150-μA src/2-A sink
capacity for the low power path.
In the low power mode with LPM = Low, the low power path FET is kept ON and the main FETs are turned OFF.
The device consumes low IQ of 35- μA (typ) in this mode. Auto Load wakeup threshold to enter into active state
can be adjusted using ISCP/LWU pin. IQ reduces to 1-μA (typ) with EN/ UVLO low.
The device provides adjustable short circuit protection using MOSFET VDS sensing or by using an external
RSNS resistor. Auto-retry and latch-off fault behavior can be configured. The device also features diagnosis of
the internal short circuit comparator using external control on SCP_TEST input.
2
TPS1213-Q1 Evaluation Module for Smart High-Side Driver
Table 1-1. TPS1213Q1EVM Kit Contents
Description
PCB
Copyright © 2023 Texas Instruments Incorporated
CAUTION
Hot surface. Contact can cause burns. Do not touch.
www.ti.com
Quantity
1
SLUUCV7 – DECEMBER 2023
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