Philips CE130/55 Service Manual page 61

1 Semiconductor
Bank Interleave Random Row Read/Write Cycle @CAS
0 1 2 3
CLK
CKE
CS
RAS
CAS
ADDR RAa CAa
A11
A10 RAa
DQ
WE
UDQM,
LDQM
Row Active
(A-Bank)
Read Command
(A-Bank)
4 5 6 7 8
High
RBb
RBb
QAa0 QAa1 QAa2 QAa3
Row Active Write Command
(B-Bank)
Precharge Command
(A-Bank)
CAS Latency=2, Burst Length=4 CAS CAS
9 10 11 12 13 14
CBb RAc CAc
RAc
QBb0 QBb1 QBb2 QBb3
Read Command
(B-Bank) (A-Bank)
Row Active
(A-Bank)
FEDD56V16160F-02
MSM56V16160F
15 16 17 18 19
QAc0 QAc1 QAc2 QAc3
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