Philips CE130/55 Service Manual page 60

1 Semiconductor
Bank Interleave Page Write Cycle @CAS
0 1 2 3
CLK
CKE
CS
RAS
CAS
ADDR RAa CAa
A11
A10 RAa
DQ DAa0
WE
UDQM,
LDQM
Row Active
(A-Bank)
Write Command
(A-Bank)
CAS CAS CAS Latency=2, Burst Length= = = = 4
4 5 6 7 8
High
RBb CBb
RBb
DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0
Row Active
(B-Bank)
Write Command
(B-Bank)
9 10 11 12 13 14
CAc CBd
Write Command
(B-Bank)
Write Command
(A-Bank)
FEDD56V16160F-02
MSM56V16160F
15 16 17 18 19
Precharge Command
(Both Bank)
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