Panasonic Transistors 2SB1030A Specifications

Transistors
2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423A
 Features
 Optimum for high-density mounting
 Allowing supply with the radial taping
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V –60
CBO
V –50
CEO
V –7
EBO
I – 0.5
C
I –1
CP
P 300
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = –10 mA, I
CBO C
V I = –2 mA, I
CEO C
V I = –10 mA, I
EBO E
I V = –20 V, I
CBO CB
I V = –20 V, I
CEO CE
h * V = –10 V, I
FE1 CE
h V = –10 V, I
FE2 CE
V I = –300 mA, I
CE(sat) C
f V = –10 V, I
T CB
C V = –10 V, I
ob CB
Q R
85 to 170 120 to 240
SJC00418AED
 Package
 Code
NS-B1
 Pin Name
1. Emitter
2. Collector
Unit
3. Base
V
V
V
A
A
mW
°C
°C
Conditions Min
= 0
E
= 0
B
= 0
C
= 0
E
= 0
B
= –150 mA
C
= –500 A
C
= –30 mA
B
= 50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S
170 to 340
Typ Max Unit
–60
–50
–7
– 0.1
–1
85 340
40
– 0.35 – 0.60
120 MHz
3.5 15.0
V
V
V
mA
mA

V
pF
1