Panasonic Switching Diodes MA2S101 Specifications

Switching Diodes
MA2S101
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
• Small terminal capacitance C
• Suitable for high-density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 250 V
R
t
= 25°C
a
Symbol Rating
V 250
R
V 250
RRM
I 100
F
I 225
FM
I 500
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R R
C V
t R
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Unit
V
V
1: Anode
mA
2: Cathode
mA
EIAJ: SC-79
mA
Marking Symbol: 1P
°C
°C
Conditions
= 70 mA
= 250 V
= 0 V, f = 1 MHz
= I = 10 mA
R
= 1 mA , R = 100 Ω
L
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00062BED
+0.05
0.60
–0.03
+0.05
0.80
–0.03
1
0.01 ±0.01
2
0.30 ±0.05
5˚
SSMini2-F1 Package
Min Typ Max
1.2
1.0
3.0
60
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= I = 10 mA
I
F R
= 100 Ω
R
L
Unit: mm
+0.05
0.12
–0.02
+0
0
–0.05
Unit
V
µA
pF
ns
1