Panasonic Schottky Barrier Diodes MA2SE01 Specifications

Schottky Barrier Diodes (SBD)
MA2SE01
Silicon epitaxial planar type
For mixer
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Small terminal capacitance C
• SS-Mini type 2-pin package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
F
t
= 25°C
a
Symbol Rating
V 20
R
V 20
RM
I 35
F
I 100
FM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R R
C V
t R
r I
f F
Unit
V
V
1: Anode
mA
2: Cathode
EIAJ: SC-79
mA
°C
Marking Symbol: 4L
°C
Conditions
= 1 mA
= 35 mA
= 15 V
= 0 V, f = 1 MHz
= 5 mA
SKH00030BED
+0.05
0.60
–0.03
+0.05
0.80
–0.03
1
0.01 ±0.01
2
0.30 ±0.05
0
5˚
SSMini2-F1 Package
Min Typ Max
0.41
1.0
200
1.2
40
Unit: mm
+0.05
0.12
–0.02
+0
–0.05
Unit
V
V
nA
pF
Ω
1