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Panasonic Schottky Barrier Diodes MA24D70 Specifications

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA24D70
Silicon epitaxial planar type
For rectification
 Overview
MA24D70 is optimal for general circuit supplies.
 Features
 Forward current (Average) I
F(AV)
 Low forward voltage V
and good rectification efficiency
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Lead temperature: Tl = 80°C, DC wave on
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
* 1
Reverse recovery time
Thermal resistance (j-a)
Thermal resistance (j-l)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. * 1: t
measurement circuit
rr
* 2: Mounted on an alumina PC board (Board: 50 mm × 50 mm × 0.8 mm, Soldering land:1.4 mm × 2.1 mm)
* 3: Mounted on an alumina PC board (Board: 50 mm × 20 mm × 1.0 mm, Soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
Publication date: July 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 5.0 A rectification is possible
5.0 A rectification is possible
5.0 A rectification is possible
= 25°C
a
Symbol
Rating
V
35
R
V
35
RM
I
5.0
F(AV)
* 2
I
60
FSM
T
150
j
T
-40 to +150
stg
= 25°C±3°C
a
Symbol
I
= 3.0 A
F
V
F
I
= 5.0 A
F
I
V
= 35 V
R
R
C
V
= 10 V, f = 1 MHz
t
R
I
= I
F
t
rr
R
= 100 W
L
Mounted on an alumina PC board
R
th(j-a)
Mounted on a glass epoxy PC board
R
th(j-l)
Bias Application Unit (N-50BU)
A
Pulse Generator
Wave Form Analyzer
(PG-10N)
(SAS-8130)
R
= 50 Ω
R
= 50 Ω
s
i
 Package
 Code
TMinP2-F1
 Pin Name
 Marking Symbol: 5M
Unit
V
V
A
A
°C
°C
Conditions
= 100 mA, I
= 10 mA,
R
rr
* 2
Input Pulse
t
t
p
r
t
10%
90%
V
R
t
= 2 µs
p
t
= 0.35 ns
r
δ = 0.05
SKH00225AED
1: Anode
2: Cathode
Min
Typ
Max
0.43
0.48
0.49
0.55
0.3
110
32
60
* 3
220
10
Output Pulse
t
I
rr
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
Unit
V
mA
pF
ns
°C/W
°C/W
1

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Summary of Contents for Panasonic Schottky Barrier Diodes MA24D70

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA24D70 Silicon epitaxial planar type For rectification  Overview MA24D70 is optimal for general circuit supplies.  Features  Forward current (Average) I = 5.0 A rectification is possible 5.0 A rectification is possible 5.0 A rectification is possible F(AV)
  • Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). MA24D70 MA24D70_ I  V = 150°C 125°C 75°C 25°C −20°C −1 −2 −3 Forward voltage V MA24D70_ P R(AV)  V R(AV) Reverse voltage V MA24D70_ I F(AV)  T F(AV) = 150°C = 20 V...
  • Page 3 This product complies with the RoHS Directive (EU 2002/95/EC). MA24D70 TMiniP2-F1 Unit: mm 2.40 0.15 ±0.10 ±0.05 1.75 ±0.05 SKH00225AED...
  • Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.