Panasonic Phototransistors PNZ154NC Specifications

Phototransistors
PNZ154NC
Silicon planar type
For optical control systems
 Features
 Fast response
 Wide spectral sensitivity characteristics
 Adoption of visible light cutoff resin
 Absolute Maximum Ratings T
Parameter
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
 Electrical Characteristics T
Parameter
* 1
Photocurrent
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage
Peak sensitivity wavelength
Half-power angle
* 2
Rise time
* 2
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4 * 1: Source: Tungsten (color temperature 2 856 K)
* 2: Switching time measurement circuit
Publication date: October 2008
= 25°C
a
Symbol Rating
V 20
CEO
V
ECO
I 20
C
P 100
C
T –25 to +85
opr
T –30 to +100
stg
= 25°C±3°C
a
Symbol
I V
L CE
I V
CEO CE
* 1
V I
CE(sat) L
λ V
PD CE
The angle from which photocurrent
θ
becomes 50%
t
r
V
CC
t
f
Sig. in V
CC
Sig. out
50 Ω
R
L
Unit
V
5 V
mA
mW
°C
°C
Conditions
= 10 V, L = 500 lx
= 10 V
= 1 mA, L = 1 000 lx
= 10 V
= 10 V, I = 5 mA, R = 100 W
L L
(Input pulse)
(Output pulse)
t
r
SHE00063AED
Min Typ
0.7 2.0
0.01
0.2
850
27
4
4
t : Rise time
r
:
t Fall time
90%
f
10%
t
f
Max Unit
mA
0.20 mA
0.5 V
nm
°
10 ms
10
ms
1