Phototransistors
PNZ154NC
Silicon planar type
For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
Adoption of visible light cutoff resin
Absolute Maximum Ratings T
Parameter
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electrical Characteristics T
Parameter
* 1
Photocurrent
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage
Peak sensitivity wavelength
Half-power angle
* 2
Rise time
* 2
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4 * 1: Source: Tungsten (color temperature 2 856 K)
* 2: Switching time measurement circuit
Publication date: October 2008
= 25°C
a
Symbol
Rating
V
20
CEO
V
ECO
I
20
C
P
100
C
T
–25 to +85
opr
T
–30 to +100
stg
= 25°C±3°C
a
Symbol
I
V
L
CE
I
V
CEO
CE
* 1
V
I
CE(sat)
L
λ
V
PD
CE
The angle from which photocurrent
θ
becomes 50%
t
r
V
CC
t
f
Sig. in
V
CC
Sig. out
50 Ω
R
L
Unit
V
5
V
mA
mW
°C
°C
Conditions
= 10 V, L = 500 lx
= 10 V
= 1 mA, L = 1 000 lx
= 10 V
= 10 V, I
= 5 mA, R
= 100 W
L
L
(Input pulse)
(Output pulse)
t
r
SHE00063AED
Min
Typ
0.7
2.0
0.01
0.2
850
27
4
4
t
: Rise time
r
:
t
Fall time
90%
f
10%
t
f
Max
Unit
mA
0.20
mA
0.5
V
nm
°
10
ms
10
ms
1