Summary of Contents for Panasonic Multi Chip Discrete UP05C8G
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Multi Chip Discrete UP05C8G Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Features Two elements incorporated into one package (Tr + CCD load device) Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
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UP05C8G Electrical Characteristics T = 25°C±3°C Tr Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Power gain Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * : Pulse measurement ...
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UP05C8G_I V = 10 V = 85°C 25°C −25°C ( V ) Base-emitter voltage V UP05C8B_ C V = 25°C f = 1 MHz Collector-base voltage V Characteristics charts of CCD load device UP05C8G_I V ( V ) Drain-source voltage V UP05C8G_ V CE(sat)
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Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.