LON EN29F040A Manual

4 megabit (512k x 8-bit) flash memory

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EN29F040A

4 Megabit (512K x 8-bit) Flash Memory

FEATURES

• 5.0V operation for read/write/erase

operations

• Fast Read Access Time

- 45ns, 55ns, 70ns, and 90ns

• Sector Architecture:

- 8 uniform sectors of 64Kbytes each

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within

individual sectors

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

GENERAL DESCRIPTION

The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform

sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A

features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the

need for WAIT states in high-performance microprocessor systems.

The EN29F040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (

controls, which eliminate bus contention issues. This device is designed to allow either single (or

multiple) Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• 0.23 µm triple-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

• Commercial and Industrial Temperature

Ranges

Rev. B, Issue Date: 2004/04/01

EN29F040A

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Table of Contents

Summary of Contents for LON EN29F040A

Page 1 WAIT states in high-performance microprocessor systems. The EN29F040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( controls, which eliminate bus contention issues. This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program.
Page 2 EN29F040A TABLE 1. PIN DESCRIPTION FIGURE 1. LOGIC DIAGRAM Pin Name Function A0-A18 Addresses A0 - A18 DQ0 - DQ7 DQ0-DQ7 Data Inputs/Outputs EN29F040A Chip Enable Output Enable Write Enable Supply Voltage (5V ± 10% ) Ground TABLE 2. SECTOR ARCHITECTURE...
Page 3: Block Diagram
EN29F040A BLOCK DIAGRAM DQ0-DQ7 Block Protect Switches Erase Voltage Generator Input/Output Buffers State Control Program Voltage Generator Command Chip Enable Register Data Latch Output Enable Logic Y-Decoder Y-Gating Vcc Detector Timer X-Decoder Cell Matrix A0-A18 This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw...
Page 4 EN29F040A FIGURE 2. PDIP FIGURE 3. PLCC FIGURE 4. TSOP This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. Rev. B, Issue Date: 2004/04/01...
Page 5 EN29F040A TABLE 3. OPERATING MODES 4M FLASH USER MODE TABLE USER MODE Ax/y DQ(0-7) STANDBY HI-Z READ Ax/y DQ (0-7) OUTPUT DISABLE HI-Z READ MANUFACTURE MANUFACTURE ID READ DEVICE ID DEVICE ID (T/B) VERIFY SECTOR CODE PROTECTION SECTOR Pulse PROTECTION...
Page 6 EN29F040A USER MODE DEFINITIONS Standby Mode The EN29F040A has a CMOS-compatible standby mode, which reduces the current to < 1µA ± 0.5. (typical). It is placed in CMOS-compatible standby when the pin is at V The device also has a TTL-compatible standby mode, which reduces the maximum V current to <...
Page 7: Command Definitions
“0”. Only erase operations can convert a “0” to a “1”. COMMAND DEFINITIONS The operations of the EN29F040A are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume.
Page 8 The data is 00h for an unprotected sector and 01h for a protected sector. Byte Programming Command Programming the EN29F040A is performed on a byte-by-byte basis using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
Page 9 EN29F040A Any commands written to the chip during the Embedded Erase algorithm are ignored. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched.
Page 10 EN29F040A The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing.
Page 11: Write Operation Status
Figure 8. Toggle Bit I The EN29F040A provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling OE or CE ) will result in DQ6 toggling between “zero”...
Page 12 EN29F040A In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 µs, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all selected sectors are protected, DQ6 will toggle for about 100 µs. The chip will then return to the read mode without changing data in all protected sectors.
Page 13 EN29F040A completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high.
Page 14: Data Protection
Low V Write Inhibit During V power-up or power-down the EN29F040A locks out write cycles to protect against any unintentional writes. If V < V , the command register is disabled and all internal program or erase circuits are disabled. Under this condition, the device will reset to the READ mode.
Page 15 EN29F040A EMBEDDED ALGORITHMS Flowchart 1. Embedded Program START Write Program Command Sequence (shown below) Data Poll Device Last Increment Address Address? Programming Done Flowchart 2. Embedded Program Command Sequence See the Command Definitions section for more information. 555H / AAH...
Page 16 EN29F040A Flowchart 3. Embedded Erase START Write Erase Command Sequence (shown below) Data Polling Device or Toggle Bit Successfully Completed ERASE Done This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.
Page 17 EN29F040A Flowchart 4. Embedded Erase Command Sequence See the Command Definitions section for more information. Chip Erase Sector Erase 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/80H 555H/80H 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H Sector Address/30H 555H/10H This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw...
Page 18 EN29F040A Flowchart 5. DATA Polling Algorithm Start Read Data DQ7 = Data? DQ5 = 1? Read Data DQ7 = Data? Fail Pass This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.
Page 19 EN29F040A Flowchart 6. Toggle Bit Algorithm Start Read Data DQ6 = Toggle? DQ5 = 1? Read Data DQ6 = Toggle? Fail Pass This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.
Page 20: Absolute Maximum Ratings
EN29F040A ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages ....–65°C to +125°C Ambient Temperature with Power Applied....–55°C to +125°C Voltage with Respect to Ground (Note 1) .
Page 21 EN29F040A Table 7. DC Characteristics = 0°C to 70°C or - 40°C to 85°C; V = 5.0V ± 10%) Symbol Parameter Test Conditions Unit ≤ Vcc Input Leakage Current ±5 µA 0V≤ V ≤ Vcc Output Leakage Current ±5 µA 0V≤...
Page 22 EN29F040A Table 8. AC CHARACTERISTICS Read-only Operations Characteristics Parameter Speed Options Symbols JEDEC Standard Unit Description Test Setup Read Cycle Time AVAV Address to Output Delay AVQV Chip Enable To Output Delay ELQV Output Enable to Output Delay GLQV Chip Enable to Output High Z...
Page 23 EN29F040A Table 9. AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Speed Options Symbols JEDEC Standard Description Unit Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH Data Hold Time WHDX Output Enable Setup Time...
Page 24 EN29F040A Table 10. AC CHARACTERISTICS Write (Erase/Program) Operations Alternate Controlled Writes Parameter Speed Options Symbols Description JEDEC Standard Unit Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH Data Hold Time EHDX Output Enable Setup Time...
Page 25 EN29F040A Table 11. ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Comments Unit Sector Erase Time Excludes 00H programming prior to erasure Chip Erase Time Byte Programming Time µs Excludes system level overhead Chip Programming Time Minimum 100K cycles guaranteed Erase/Program Endurance...
Page 26 EN29F040A Table 15. DATA RETENTION Parameter Description Test Conditions Unit 150°C Years Minimum Pattern Data Retention Time 125°C Years This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.
Page 27: Switching Waveforms
EN29F040A SWITCHING WAVEFORMS Figure 5. AC Waveforms for READ Operations Figure 6. AC Waveforms for Chip/Sector Erase Operations Notes: SA is the Sector address for Sector erase. This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.
Page 28 EN29F040A SWITCHING WAVEFORMS (continued) Figure 7. Program Operation Timings Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. /DQ7 is the output of the complement of the data written to the device.
Page 29 EN29F040A Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations Notes: = Valid Data (The device has completed the embedded operation). Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations Notes: stops toggling (The device has completed the embedded operation).
Page 30 EN29F040A SWITCHING WAVEFORMS (continued) Figure 10. Alternate /CE Controlled Write Operation Timings Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. /DQ7 is the output of the complement of the data written to the device.
Page 31: Ordering Information
EN29F040A ORDERING INFORMATION EN29F040A - 45 PACKAGING CONTENT Blank= Conventional P=Pb free TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (-40°C to +85°C) PACKAGE P = 32 Plastic DIP J = 32 Plastic PLCC T = 32 Plastic TSOP...
Page 32: Physical Dimensions
EN29F040A PHYSICAL DIMENSIONS PL 032 ¡ X 32-Pin Plastic Leaded Chip Carrier This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. Rev. B, Issue Date: 2004/04/01...
Page 33 EN29F040A PHYSICAL DIMENSIONS (continued) PD 032 ¡ X 32-Pin Plastic DIP This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. Rev. B, Issue Date: 2004/04/01...
Page 34 EN29F040A PHYSICAL DIMENSIONS (continued) TS 032 ¡ X 32-Pin Standard Thin Small This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. Rev. B, Issue Date: 2004/04/01...
Page 35 EN29F040A Revisions List Revision No Description Date Initial draft 2003/04/03 Correct a typo of table 5 on page 8. 2004/04/01 Address bits A18-A16 uniquely select any Sector This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications.