Samsung SCH-8500 Service Manual
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Samsung SCH-8500 Service Manual

Samsung SCH-8500 Service Manual

Dual band(pcs+amps) portable telephone
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ELECTRONIC
SERVICE
DUAL MODE TELEPHONE
DUAL BAND(PCS+AMPS)
PORTABLE TELEPHONE
SCH-8500
Manual
CONTENTS
3. Test Commands & Test Procedure List

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Summary of Contents for Samsung SCH-8500

  • Page 1: Table Of Contents

    DUAL BAND(PCS+AMPS) PORTABLE TELEPHONE ELECTRONIC SCH-8500 SERVICE Manual DUAL MODE TELEPHONE CONTENTS 1. Specification 2. Nam Programming 3. Test Commands & Test Procedure List 4. Test Procedure 5. Exploded View & its Parts List 6. Electrical Parts List 7. Block Diagram 8.
  • Page 2 ELECTRONICS Samsung Electronics Co.,Ltd. Dec. 99 Pinted in Korea. Code No.: GH68-00949A...

  • Page 3: Specification

    -30°C ~ +60°C Supply Voltage 3.6V Size and Weight Slim : 88mm X 50mm X 23.5mm, 105 g, 500 mA : 88mm X 50mm X 25.7mm, 135 g, 1000 mA : 88mm X 50mm X 27.5mm, 151 g, 1600 mA Samsung Electronics...
  • Page 4 • -65dBm • -104dBm : +15.0dBm ~ +30dBm Minimum Tx Power Control : below -50dBm Closed Loop Power Control Range : ± 24dB Maximum RF Output Power : 200mW(+23dBm) Occupied Bandwidth : 1.23MHz Conducted Spurious Emission @1.25 MHz: -42dBc/30kHz Samsung Electronics...
  • Page 5 Intermodulation Spurious Response Attenuation : lower than 1 % Rx power = -101dBm Tone 1 power = -43dBm Tone 2 power = -43dBm Tone 1 : offset from carrier = ± 1.25 MHz Tone 2 : offset from carrier = ± 2.05 MHz Samsung Electronics...
  • Page 6 Wideband Data : ±8 kHz(±10%) Post Deviation Limiter Filter 3.0 ~ 5.9 kHz : above 40 LOG(F/3000)dB 5.9 ~ 6.1 kHz : above 35dB 6.1 ~ 15 kHz : above 40 LOG(F/3000)dB Over 15 kHz : above 28 dB Samsung Electronics...
  • Page 7 : -45dBm 70 ~ 130MHz : -41dBm 130 ~ 174 MHz : -41 ~ -32dBm 174 ~ 260 MHz : -32 dBm 260 ~ 470 MHz : -32 ~ -26 dBm 470 ~ 1G MHz : -21 dBm Samsung Electronics...

  • Page 8: Nam Programming

    Slot Mode Slot mode. ‘Yes’ indicates the slot mode. * or # - changes the status. - stores it. Slot Index Slot mode index. The higher,the longer sleeping time 20-7 - to change,enter new one. - stores it. Samsung Electronics...
  • Page 9 - Stores it. NID written in the list,current status is displayed. number - To change,enter new one. - Stores it. AMPS ACCOLC AMPS Access Overload Class,current status is displayed. class number - To change,enter new one. - Stores it. Samsung Electronics...
  • Page 10 - To change, enter new one. - Store it. ————— repeated to SID 20 & NID 20—————————— NAM2 Digital Lockout SID01 1st lock system ID,current status is displayed. ID number - To change, enter new one. - Store it. Samsung Electronics...
  • Page 11 Auto Registration, current status is displayed < or > - Changes the status. - Store it. NAM2 Analog ACCOLC Analog Access Overload Class, current status is displayed. class number - To change, enter new one. - Store it Samsung Electronics...

  • Page 12: Test Procedure

    CAUTION : The test jig and data cable has a voltage drop of 0.33V at FM Max power output, you’d better set the DC power supply to 3.93V for normal test condition. (Nominal voltage of battery is 3.6V at cellular phone) Samsung Electronics...
  • Page 13 TEST CABLE DESCRIPTION FOR SCH-8500 1. TEST CABLE 2. TEST CABLE CONNECTIONS MHC 172 RF CABLE (1.4 dB Loss for AMPS, 2.2dB for PCS) BNC CONNECTOR (RF) PLUG CONNECT TO SCH-8500 DATA CABLE Dsub 25PIN CONNECTOR (DATA) Samsung Electronics...
  • Page 14 990 ≤ N ≤ 1023 FREQUENCY F=0.03 X (N-1023) + 870.00 0 ≤ N ≤ 1199 N ; CH NUMBER F=0.05 X N + 1850.00 FREQUENCY F ; FREQUENCY 0 ≤ N≤ 1199 F=0.05 X N + 1930.00 2. CDMA (PCS) FREQUENCY Samsung Electronics...
  • Page 15 H. “9 2 * * * “ : Output RF power level is set as power level 2 “* * *” means AGC level and AGC level range is from 0 to 511. I. “1 0 2” : RF Power level control, 2(0~7) means power level . Samsung Electronics...
  • Page 16 G. “3 4” : Spread spectrum to 1.23MHz band width. H. “84” : High Power-mode On I. “7 4 * * * “ : Output RF power level is set max power “* * *” means AGC level and AGC level range is from 000 to 511. Samsung Electronics...
  • Page 17 “0 7” : Carrier On. “1 4” : TX Audio unmute. Set the audio generator output to 1kHz, 3.0Vrms. Measure the Tx voice deviation by using the HPF of 20Hz and the LPF of 99kHz (spec : less than ±12kHz). Samsung Electronics...
  • Page 18 “0 9 0 3 6 3 #” : Set channel to 363. “0 7” : Carrier On. “1 2” : RX Audio unmute. Set the equipment as following. RF frequency : 880.89MHz Input RF level : -80dBm Modulation frequency : 1kHz Frequency deviation : ±8kHz Measure audio AC level. Samsung Electronics...
  • Page 19 Registering: HHP HP8924C. Call : HP8924C HHP. Measure the Gated Power & Time. spec : Gated Power - at least 20dB Gated Time - Rising Time : below 6µs Falling Time : below 6µs Burst Time : below 1.25µs Samsung Electronics...

  • Page 20: Exploded View & Its Parts List

    5. Exploded View & its Parts List 5-1 Main Set Exploded View Samsung Electronics...

  • Page 21: Main Set Parts List

    MPR-SCREW CAP GH72-00672B PMO-EAR PIECE GH72-00283E PCT-WINDOW LCD GH72-10001A PPR-TAPE WINDOW BOHO GH73-00216B RMO-KEY PAD GH72-00489A PPR-KEYPAD DOME GH73-00218A RMO-HOLDER MIC GH73-40704A RMO-CONNECTOR COVER GH73-40705A RMO-MOBILE CAP GH42-00040A ANTENNA 6001-001140 SCREW-MACHINE 4PCS GH43-00161A BATTERY-STD 1000mAh GH75-00223E MEC-HANGER ROPE BLACK Samsung Electronics...

  • Page 22: Electrical Parts List

    PCB-VOLUME KEY SCH-8500,POLYIMIDE GH42-00040A ANT. ANTENNA-SCH8500/850 SCH-8500,824~894/1850~1990Mhz GH43-00161A BATTERY-SCH850,8500(USA) 3.6V,1000mAh,-,0.5C,3.6V GH44-00099A CHARGER-DTC850(USA) SCH-850/8500,AC/DC,12W,85/264V GH96-00862A ELA ETC-LCD ASS’Y SCH-8500,GRAPHIC LCD GH41-00060A PCB-LOGIC SCH-8500,FR-4,-,0.8t,118 X 104mm GH41-00061A PCB-RF SCH-8500,FR-4,6L,0.8t,118 X 155 0404-001093 D402 DIODE-SCHOTTKY HSMS-282C,1V,30mA,SOT-323,TP 0409-001001 D301 DIODE-PIN BAR63-03W,50V,100mA,SOT-23,TP 0409-001025 D302 DIODE-PIN...
  • Page 23 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C369 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C370 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C373 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C410 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C421 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C431 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000233 C465 C-CERAMIC,CHIP 0.1nF,5%,50V,NP0,TP,1005 2203-000254 C314 C-CERAMIC,CHIP 10nF,10%,16V,X7R,TP,1005,- 2203-000254 C315 C-CERAMIC,CHIP 10nF,10%,16V,X7R,TP,1005,- Samsung Electronics...
  • Page 24 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C427 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C436 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C446 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C447 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C455 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000438 C462 C-CERAMIC,CHIP 1nF,10%,50V,X7R,TP,1005,- 2203-000466 C307 C-CERAMIC,CHIP 0.001nF,0.25pF,50V,NP0,1005 2203-000466 C337 C-CERAMIC,CHIP 0.001nF,0.25pF,50V,NP0,1005 2203-000466 C365 C-CERAMIC,CHIP 0.001nF,0.25pF,50V,NP0,1005 Samsung Electronics...
  • Page 25 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005061 C363 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005061 C368 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005061 C439 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005061 C440 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005061 C443 C-CERAMIC,CHIP 100nF,+80-20%,16V,Y5V,TP,1005 2203-005281 C404 C-CERAMIC,CHIP 0.0015nF,0.1pF,50V,NP0,TP,1005 2203-005281 C433 C-CERAMIC,CHIP 0.0015nF,0.1pF,50V,NP0,TP,1005 2203-005288 C419 C-CERAMIC,CHIP 0.001nF,0.1pF,50V,NP0,TP,1005 2203-005288 C454 C-CERAMIC,CHIP 0.001nF,0.1pF,50V,NP0,TP,1005 Samsung Electronics...
  • Page 26 INDUCTOR-SMD 39nH,5%,1.0x0.5x0.5mm 2703-001798 L422 INDUCTOR-SMD 2.2NH,0.3NH,1.0X0.5X0.5MM 2703-001868 L401 INDUCTOR-SMD 82NH,5%,1005 2703-001868 L408 INDUCTOR-SMD 82NH,5%,1005 2703-001916 L402 INDUCTOR-SMD 100nH,2%,1.6x0.8x0.8mm 2703-001918 L322 INDUCTOR-SMD 150nH,2%,1.6x0.8x0.8mm 2703-001920 L412 INDUCTOR-SMD 2.2uH,20%,3.2x2.5x2.0mm 2703-001943 L308 INDUCTOR-SMD 10nH,5%,1.0x0.5x0.5mm 2703-001943 L309 INDUCTOR-SMD 10nH,5%,1.0x0.5x0.5mm 2703-001952 L314 INDUCTOR-SMD 8.2nH,5%,1.0x0.5x0.5mm Samsung Electronics...
  • Page 27 DIODE-TVS SMF05,6/-/-V,200W,- 0406-001084 D108 DIODE-TVS SMF05,6/-/-V,200W,- 0406-001084 D109 DIODE-TVS SMF05,6/-/-V,200W,- 0407-000115 D110 DIODE-ARRAY DAN202U,80V,100mA,CA2-3,SC-70, 0409-001016 D201 DIODE-PIN BAR63-02W,50V,100mA,SCD-80,TP 0501-000162 Q104 TR-SMALL SIGNAL 2SA1576,PNP,200MW,SOT-323,TP,180-390 0501-000218 Q103 TR-SMALL SIGNAL 2SC4081,NPN,200mW,UMT,TP,180-3 0501-000218 Q151 TR-SMALL SIGNAL 2SC4081,NPN,200mW,UMT,TP,180-3 0501-002202 Q102 TR-SMALL SIGNAL MMBT2222AWT1,NPN,150mW,SOT-323 Samsung Electronics...
  • Page 28 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R125 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R128 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R129 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R131 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R132 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R149 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000138 R209 R-CHIP 100ohm,5%,1/16W,DA,TP,1005 2007-000140 R148 R-CHIP 1Kohm,5%,1/16W,DA,TP,1005 2007-000140 R169 R-CHIP 1Kohm,5%,1/16W,DA,TP,1005 Samsung Electronics...
  • Page 29 R-CHIP 22Kohm,5%,1/16W,DA,TP,1005 2007-000153 R174 R-CHIP 22Kohm,5%,1/16W,DA,TP,1005 2007-000153 R175 R-CHIP 22Kohm,5%,1/16W,DA,TP,1005 2007-000153 R176 R-CHIP 22Kohm,5%,1/16W,DA,TP,1005 2007-000153 R179 R-CHIP 22Kohm,5%,1/16W,DA,TP,1005 2007-000154 R257 R-CHIP 24Kohm,5%,1/16W,DA,TP,1005 2007-000156 R225 R-CHIP 30Kohm,5%,1/16W,DA,TP,1005 2007-000157 R117 R-CHIP 47Kohm,5%,1/16W,DA,TP,1005 2007-000157 R118 R-CHIP 47Kohm,5%,1/16W,DA,TP,1005 2007-000159 R150 R-CHIP 56Kohm,5%,1/16W,DA,TP,1005 Samsung Electronics...
  • Page 30 R-CHIP 10Kohm,1%,1/16W,DA,TP,1005 2007-007142 R214 R-CHIP 10Kohm,1%,1/16W,DA,TP,1005 2007-007142 R217 R-CHIP 10Kohm,1%,1/16W,DA,TP,1005 2007-007142 R222 R-CHIP 10Kohm,1%,1/16W,DA,TP,1005 2007-007309 R223 R-CHIP 12Kohm,1%,1/16W,DA,TP,1005 2007-007311 R102 R-CHIP 22Kohm,1%,1/16W,DA,TP,1005 2007-007311 R201 R-CHIP 22Kohm,1%,1/16W,DA,TP,1005 2007-007318 R103 R-CHIP 1Kohm,1%,1/16W,DA,TP,1005 2007-007491 R224 R-CHIP 11.3Kohm,1%,1/16W,DA,TP,1005 2007-007588 R208 R-CHIP 1.8Kohm,1%,1/16W,DA,TP,1005 Samsung Electronics...
  • Page 31 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C284 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C285 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C286 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C287 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C288 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C289 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C290 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C291 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 2203-000386 C292 C-CERAMIC,CHIP 0.015nF,5%,50V,NP0,TP,1005 Samsung Electronics 6-10...
  • Page 32 8.2nF,10%,16V,X7R,TP,1005,- 2203-001210 C124 C-CERAMIC,CHIP 8.2nF,10%,16V,X7R,TP,1005,- 2203-001210 C125 C-CERAMIC,CHIP 8.2nF,10%,16V,X7R,TP,1005,- 2203-001210 C126 C-CERAMIC,CHIP 8.2nF,10%,16V,X7R,TP,1005,- 2203-001416 C112 C-CERAMIC,CHIP 33nF,10%,16V,Y5V,TP,1005,1.0mm 2203-001432 C110 C-CERAMIC,CHIP 47nF,10%,16V,Y5V,TP,1005 2203-001432 C248 C-CERAMIC,CHIP 47nF,10%,16V,Y5V,TP,1005 2203-001724 C157 C-CERAMIC,CHIP 4700NF,+80-20%,16V,Y5V,TP,3216 2203-001724 C160 C-CERAMIC,CHIP 4700NF,+80-20%,16V,Y5V,TP,3216 2203-001724 C161 C-CERAMIC,CHIP 4700NF,+80-20%,16V,Y5V,TP,3216 6-11 Samsung Electronics...
  • Page 33 1uH,10%,0.8x1.6x0.8mm 2703-000300 L211 INDUCTOR-SMD 1uH,10%,0.8x1.6x0.8mm 2703-001231 L204 INDUCTOR-SMD 10uH,10%,1.6x0.8x0.8mm 2703-001512 L208 INDUCTOR-SMD 27nH,5%,1.8x1.12x1.02mm 2703-001914 L205 INDUCTOR-SMD 180nH,2%,1.6x0.8x0.8mm 2703-001914 L207 INDUCTOR-SMD 180nH,2%,1.6x0.8x0.8mm 2703-001926 L206 INDUCTOR-SMD 27nH,2%,1.6x0.8x0.8mm 2801-003747 OSC102 CRYSTAL-SMD .032768MHZ,30PPM,28-ACM,9PF 2802-001104 OSC101 RESONATOR-CERAMIC 27MHZ,0.5%,TP,2.5X2X1.2 3002-001094 AU101 BUZZER-MAGNETIC 93dB,3.6V,90mA,2630Hz,TP Samsung Electronics 6-12...
  • Page 34 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD106 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD107 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD108 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD109 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD110 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD111 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- GH71-00002A GD112 NPR-GROUNDING TERMINAL SCH-510,C1720,T0.1,- 6-13 Samsung Electronics...

  • Page 35: Block Diagram

    7. Block Diagram Samsung Electronics...

  • Page 36: Pcb Diagram

    8. PCB Diagram 8-1 Logic Top View Samsung Electronics...
  • Page 37 8-2 Logic Bottom View Samsung Electronics...
  • Page 38 8-3 RF Bottom View Samsung Electronics...

  • Page 39: Schematic Diagrams

    9. Schematic Diagrams 9-1 Logic Circuit Diagram (1) S3.6 AD(0:15) C128 10NF SCH-8500(DBTM) Rev10C SMT-801-02A AU101 A(0:19) D110 Q110 R101 R103 DAN202UT106 DTA144EE/TR Q103 Q111 2SC4081BRT106 MMBT2222AWT1 U103 D101 BUZZER R169 Q102 CL-150HR LED_ON MMBT2222AWT1 C132 A(1) 100NF A(2) SW101...
  • Page 40 2.2K TX_AUDIO R1C1 ILC7082AIM5-30 FIXING HOLE PCS_BAND C161 R185 R191 4.7UF FDC6329L DP_RX_DATA DP_TX_DATA U159 HP_PWR U156 U157 U160 R186 SCH-8500(DBTM) Rev10C VOUT VINR1 TCXO_VAA VRR_S VINR1 VRR_CELL VINR1 VRR_S C167 R181 R182 C168 10NF C160 R190 R192 R152 VON/OFF...
  • Page 41 L414 L413 R416 3.9K BLM11A102SPT BLM11A102SPT R427 U405 R417 C429 C451 10NF 10NF D402 HSMS-285C U415 R447 LMV821M7 R425 R455 430K R411 PDM1 R412 C454 MODE_SEL R443 C460 TC4W53FU-TE12L 100K 10NF C453 C461 R424 47PF R426 C464 10NF Samsung Electronics...
  • Page 42 1.2K 19.68MHZ PLL_EN FIN_IF RX_IFVCO_OUT R329 3.9K U307 TCXO_VAA L335 DO_IF RX_IFVCO_VT C373 C370 C369 TCO-5660U1(19.68MHz) BLM11A102SPT 100PF 100PF 100PF 8 11 15 R328 C368 C366 1.5K C375 100NF TRK_LO_ADJ 10UF 10UF C371 C377 6.3V C367 6.3V 10NF Samsung Electronics...

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