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5 . S G H - X 1 0 0
B l o c k
D i a g r a m s
1. RF So lut ion Bloc k Diagram
HITACHI METAL ANT S/W
SHS-M090TC
Imax = 10 mA
Freq (MHz )
Loss
880 - 915
1.1 dB
925 - 960
0.8 dB
1710 -1785
1.3 dB
1805 -1880
1.15 dB
Atten 2xfo : 39dB,30dB(GSM,DCS)
3xfo : 35dB,20dB(GSM,DCS)
Vc_EGSM
EGSM_MODE_SW
Inverter circuits
DCS_MODE_SW
VCC_RX_TX
Micro Devices Quadband PAM
RF3140 (10 X10)
GSM: Pout = 35.0 dBm E
DCS: Pout= 33.0 dBm E
EPCOS EGSM RX SAW Filter
B7820 (2.0X1.4)
IL=1.9dB typ 2.7dB max
Ripple=0.8dB typ 1.4dB max
SAWTEK DCS RX SAW Filter
856079 (2.5X2)
IL=2.8dB typ 3.5dB max
Vc_DCS
Ripple=0.8dB typ 1.8dB max
Discrete
3 rd Order
Loop Filter
fc = ? kHz
OFFSET Mixer input power
-16dBm max, -22dBm min
Vcc_Tx_BURST
~
~
GSM S/W
DCS S/W
? ¨¶? ? ?
TX VCO
VOU1810F27KRA (8.0X6.0X1.6)
GSM
GSM =
880 ~ 915MHz
(Vt=0.5V ~ 3.0V )
kV = 55+-11 MHz/V Typ
DCS =
1710 ~ 1785MHz
VAPC
(Vt=0.5V ~ 3.0V )
kV = 115+-23 MHz/V Typ
Pout= 6.5+-3 dBm typ.,Ic <= 30mA
DCS/PCS
Harmonics <= -10dBc
VBAT
ff = 60%
ff = 55%
SAMSUNG Proprietary-Contents may change without notice
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QUAD
Vcc_RF_LO
VREG
DIV
Vcc_RF_VCO
~
GSM/DCS/PCS
CP
FESW1
FESW2
CP
PFD
Philips Transceiver
UAA3536
VCC_SYN (2.7V , 100mA )
RF1_VDD
VCC_RX_TX (2.7V ,100mA )
RF2_VDD
VCC_RF_VCO (2.70V , 100mA )
RF1_VDDS
VCC_TX_BURST(2.7V , 100mA )
RF2_VDDS
VCC_CP (4.0V , 25mA )
HVS
5- 1
VREG
FracN
DIV
f compRF =26MHz
PFD
I+
DIV
1:1/
QUAD
2
fmod
I-
3
W
fTXIF
BUS
60/114MHz
Q+
CTL
REG
Q-
PW
R
EN
VBat (3.6V typ 3.0V min)
PON_TX
PON_SYNT
PMU
V_MODE
AVDD(1.35V min 2.65V max , 100mA )
VDD1 (1.35V min 2.95V max , 150mA )
VDD2 (1.35V min 3.45V max , 150mA )
VDD3 (1.35V min 3.45V max , 100mA )
VDD4 (1.35V min 3.45V max , 150mA )
Pins IA,IB,QA and QB
VIQ : 1.25V
typ . , 1.15V min , 1.35V max
Vmod : 0.5V pp
+ I OUT
-
I OUT
100 kHz+fmod
+
Q OUT
-
Q OUT
Vcc_SYN
Vcc_REF(2.4V typ.)
REFIN
VTCXO
26MHz
DATA
CLK
EN
RXON
TXON
SYNON
FESWON
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