Gates M5700 Manual

Transistor program amplifier
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ig. 1 - M5700 Transistor Program Amplifier
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TECHNICAL DATA
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Input Impedance:
actory connected for 150 ohms. May
also be connected for 600 ohms.
The Gates Transistor Program Amplifier is
available in two versions:
Intermodulation Distortion:
Under 0.3% at +14 dbm equivalent sine
Harmonic Distortion:
Under 0.75% at 30 cps ., 0.5% from 50
to 15,000 cps., at +24 dbm output.
ource Impedance:
150/250 ohms,
Noise Level:
-122 dbm equivalent input noise.
o
wave power output, using 40 and 7000
cps.,, mixed 4:1. Under 1.5% at +24
dbm.
or 500/600 ohms .
2. The M5700B is designed for rack mount ­
ing in system installations with the level
control mounted internally.
The input of
the amplifier is unterminated to facilitate
application. Terminate the input connect ­
ions on the amplifier mounting tray in the
proper resistance (150 or 600 ohms).
The
gain of the M5700B will then be approxi ­
mately 70 db maximum.
Gain:
M5700: 80 DB,
M5700B: 76 DB,
may be reduced as required with
internal volume control.
requency Response:
+ 1 db from 30 to 15,000 cps.
1. The M5700 is designed specifically for
use in Gates Transistor Consoles. It is
supplied less the interstage level control
and with the input unterminated. The con ­
trol is mounted externally on the Console
panel.

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