Skyworks Si8281v2-EVB User Manual

USER GUIDE
UG519: Si8281v2-EVB User Guide
Key Features
• Si8281 ISODrivers for 4 A or higher gate drive with
current booster daughter cards
• Sockets for TO-247 package SiC FETs or IGBTs
• Capable of double pulse test
• DESAT short circuit and many other performance
evaluations
The output current of the Si828x is rated at 4 A, which is sufficient to drive most discrete SiC FETs and IGBTs. 
However, for applications that require a higher gate drive current, customized external bipolar transistor-based
current booster circuits can be used with the Si828x gate drivers. These current booster circuits are located on a
small daughter card (DC) that comes with the kit, and they can be used to drive high-power SiC/IGBT switching
devices.
The Si8281v2-EVB (Evaluation Board) is equipped with solder bump jumpers that facilitate testing of the Si8281
gate driver with or without the included but optional external current booster circuit. This allows users to assess
the performance of the gate driver with or without the booster circuit and determine if the booster circuit is 
necessary for their specific application. Also, the EVB can accommodate switching devices in 3- and 4-pin TO-247
packages; however, switching devices (Q1 and Q2) are not included in the kit. The user may acquire switching
devices that are appropriate for their specific application.
The Si8281 gate drivers are powered by an integrated dc-dc converter that drives an external transformer to 
generate +15 V and –4 V biasing voltages. This integrated dc-dc converter enables the Si8281 isolated full-feature
gate driver to provide a compact solution for medium and high-power switching applications.
Skyworks Solutions, Inc. • Phone [949] 231-3000 • sales@skyworksinc.com • www.skyworksinc.com
206571B • Skyworks Proprietary Information • Products and Product Information are Subject to Change without Notice
1
Description
The Si8281v2-EVB is a versatile platform that 
demonstrates the capabilities of the Si8281 SiC 
FET-Ready ISODriver with Safety Features and 
integrated dc/dc converter for driving SiC FET or IGBT
power switching devices. It includes two switch device
sockets, with the high-side switch device connected in
the off-state to function as a diode. This setup enables
the low-side SiC/IGBT switching device to work with an
external inductor to support double pulse testing and
switching loss measurements. The EVB can also be
used to test the Si8281 gate driver capabilities, such as
output current and DSAT protection circuits, by placing
a SiC or IGBT switch in the low-side socket and 
exercising the onboard Si8281 low-side driver.
June 2, 2023