Panasonic Schottky Barrier Diodes MA2Z7840G Specification Sheet

Schottky Barrier Diodes (SBD)
MA2Z7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• High-density mounting is possible
• Forward current (Average) I
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA rectification is possible
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
I 100
F(AV)
I 300
FM
I 1
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol: 2D
Unit
V
V
mA
mA
A
°C
°C
Conditions
= 100 mA
= 30 V
R
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 0.1 I = 100 Ω
, R
L
R
4. * : t measurement circuit
rr
Input Pulse
t
t
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00187AED
SMini2-F3
1: Anode
2: Cathode
Min Typ
20
2.0
Output Pulse
p
t
t
rr
I
F
= 0.1 I
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max Unit
0.55 V
µA
15
pF
ns
t
R
1