DRIVING CONDITION IN FUNCTIONAL TEST
Ic ≤ 10 ma
LOW DRIVE
Ib ≤ 0.9 ma
Ic ≤ 350 ma
HIGH DRIVE
Ib ≤ 75 ma
DRIVING PULSE ≤ 300 us
CONSTANT CURRENT SOURCE
RANGE
LOW
HIGH
1
3 ma
50 ma
2
10 ma
150 ma
3
30 ma
400 ma
4
35 ma
500 ma
5
40 ma
650 ma
6
50 ma
750 ma
7
70 ma
1000 ma
DUT OUTPUT LEVEL THRESHOLD LEVEL
LOGIC
OUT-CIRCUIT
IN-CIRCUIT
HIGH
11.0 V
6.80 V
LOW
1.18 V
2.20 V
DIODE FORWARD VOLTAGE (Vf) MEASUREMENT
MIN. Vf > 0.1 V WITH FORWARD CURRENT FROM 50 ma
to 1,000 ma
ZENER DIODE BREAKDOWN VOLTAGE (Vz)
FROM 0.1V TO 30V WITH BIAS CURRENT FROM 3 ma TO 80 ma
VOLTAGE REGULATOR OUTPUT VOLTAGE (+/- Vo)
FROM 0.2 V to 26.0 V WITH OUTPUT LOADING CURRENT FROM
50 ma to 1.0 AMP
ACCESSORIES FURNISHED:
• 120 V or 220 V AC POWER ADAPTOR
• INSTRUCTION MANUAL
• THREE POINT PROBING DEVICE FOR IN-CIRCUIT TESTING
• TEST SOCKET ADAPTOR FOR TESTING SMD PACKAGES
OPTIONAL ACCESSORIES:
• THREE COLOR CODED TEST LEADS w/MINI PLUGS & TEST CLIPS
• TEST SOCKET ADAPTOR FOR TESTING OPTOISOLATORS
• HEAVY DUTY TEST SOCKET ADAPTOR FOR HIGH VOLUME
PRODUCTION TEST
Information Scan Technology, Inc.
IST
487 Gianni St., Santa Clara, California 95054
Phone: 408.988.1908
Fax: 408.980.1794
Web: www.infoscantech.com
IST MODEL 878
TECHNICAL SPECIFICATIONS
PARAMETERS FOR LEAKAGE CURRENT MEASUREMENT
BIPOLAR / MOSFET TRANSISTORS: Ices, Iceo, Icbo, & Idss
DIODE: Ir
THYRISTOR (SCR/TRIAC): Idrm
TEST RANGE
RESOLUTION
ACCURACY
GIVEN VOLTAGE
*
0-400 uA
0.1 nA
+/- 2%
0-1,099 V Programmable
0-4 uA
1 nA
+/- 1%
0-1,099 V Programmable
0-40 uA
10 nA
+/- 1%
0-1,099 V Programmable
0-400 uA
100 nA
+/- 1%
0-1,099 V Programmable
0-4 mA
1 uA
+/- 1%
0-1,099 V Programmable
0-40 mA
10 uA
+/- 1%
Not Available
MOSFET AND J-FET LEAKAGE CURRENT MEASUREMENTS
MOSFET: Igss
J-FET: Idss, Igss
TEST RANGE
RESOLUTION
ACCURACY
GIVEN VOLTAGE
*
0-400 uA
0.1 nA
+/- 2%
0-30 V Programmable
0-4 uA
1 nA
+/- 1%
0-30 V Programmable
0-40 uA
10 nA
+/- 1%
0-30 V Programmable
0-400 uA
100 nA
+/- 1%
0-30 V Programmable
0-4 mA
1 uA
+/- 1%
0-30 V Programmable
0-40 mA
10 uA
+/- 1%
0-30 V Programmable
PARAMETERS FOR BREAKDOWN VOLTAGE MEASUREMENT
BIPOLAR / MOSFET TRANSISTORS: BVceo, BVces, BVcbo, & VBdss
DIODE: BVr
THYRISTOR: BVdrm
TEST RANGE
RESOLUTION
ACCURACY
GIVEN CURRENT
0-30 V
0.03 V
+/- 1%
0-40 mA auto-ranging
30-1,099 V
1.05 V
+/- 1%
0-4 mA auto-ranging
HIGH VOLTAGE SUPPLY
Max Output Voltage: 1,099 V
Max Output Wattage: 3 W
* - Autoranging
DIMENSIONS:
9.2" WIDE x 6.3" DEEP x 2.8" HIGH (23.3 cm x 16 cm x 7.1 cm)
SHIPPING WEIGHT:
7.5 lbs (3.4kg)
AC/AC POWER ADAPTOR:
INPUT: 120 VAC or 220 VAC +/- 5% 50/60 Hz
OUTPUT: 36 VAC with C.T. 800mA Max.
MODEL 878
IST
PROGRAMMABLE PARAMETRIC TESTER
FOR SEMICONDUCTOR DEVICES
The IST 878 is a low cost test instrument that provides in-circuit or out-circuit
testing for a wide range of discrete semiconductors including:
• Bipolar Transistors
• Zener Diodes
• MOSFETs
• Junction FETs
• IGBTs
• SCRs
• Diodes
• TRIAC
• Optoisolators
• Voltage Regulators
• TVS (Varistors,
SIDACs)
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