Cypress Semiconductor S29JL064J Manual

Distinctive Characteristics
Architectural Advantages
 Simultaneous Read/Write operations
– Data can be continuously read from one bank while executing
erase/program functions in another bank
– Zero latency between read and write operations
 Flexible bank architecture
– Read may occur in any of the three banks not being programmed
or erased
– Four banks may be grouped by customer to achieve desired bank
divisions
 Boot sectors
– Top and bottom boot sectors in the same device
– Any combination of sectors can be erased
 Manufactured on 0.11 µm Process Technology
 Secured Silicon Region: Extra 256-byte sector
– Factory locked and identifiable: 16 bytes available for secure,
random factory Electronic Serial Number; verifiable as factory
locked through autoselect function
– Customer lockable: One-time programmable only. Once locked,
data cannot be changed
 Zero power operation
– Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
 Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
standard
Package Options
 48-ball Fine-pitch BGA
 48-pin TSOP
Performance Characteristics
 High performance
– Access time as fast as 55 ns
– Program time: 7 µs/word typical using accelerated programming
function
General Description
The S29JL064J is a 64 Mbit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of
8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt V
device is available with an access time of 55, 60, 70 ns and is offered in a 48-ball FBGA or 48-pin TSOP package. Standard control
pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus
contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations.
Cypress Semiconductor Corporation
Document Number: 002-00856 Rev. *E
64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3 V
Simultaneous Read/Write Flash
 Ultra low power consumption (typical values)
– 2 mA active read current at 1 MHz
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
 Cycling endurance: 1 million cycles per sector typical
 Data retention: 20 years typical
Software Features
 Supports Common Flash Memory Interface (CFI)
 Erase suspend/erase resume
– Suspends erase operations to read data from, or program data to,
 Data# polling and toggle bits
– Provides a software method of detecting the status of program or
 Unlock bypass program command
– Reduces overall programming time when issuing multiple program
Hardware Features
 Ready/Busy# output (RY/BY#)
– Hardware method for detecting program or erase cycle
 Hardware reset pin (RESET#)
– Hardware method of resetting the internal state machine to the
 WP#/ACC input pin
– Write protect (WP#) function protects sectors 0, 1, 140, and 141,
– Acceleration (ACC) function accelerates program timing
 Sector Protection
– Hardware method to prevent any program or erase operation
– Temporary Sector Unprotect allows changing data in protected
supply, and can also be programmed in standard EPROM programmers. The
CC
• 198 Champion Court
a sector that is not being erased, then resumes the erase
operation
erase operations
command sequences
completion
read mode
regardless of sector protect status
within a sector
sectors in-system
,
• San Jose CA 95134-1709
S29JL064J
• 408-943-2600
Revised December 08, 2015