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Cree KIT8020CRD8FF1217P-1 User Manual

Silicon carbide mosfet evaluation kit
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KIT8020CRD8FF1217P-1
CREE Silicon Carbide MOSFET
Evaluation Kit
User's Manual
This document is prepared as a user reference guide to install and operate CREE evaluation
hardware.
Safety Note: Cree designed evaluation hardware is meant to be an evaluation tool in a
lab setting for Cree components and to be handled and operated by highly qualified
technicians or engineers. The hardware is not designed to meet any particular safety
standards and the tool is not a production qualified assembly
Subject to change without notice.
1
www.cree.com

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Summary of Contents for Cree KIT8020CRD8FF1217P-1

  • Page 1 CREE Silicon Carbide MOSFET Evaluation Kit User’s Manual This document is prepared as a user reference guide to install and operate CREE evaluation hardware. Safety Note: Cree designed evaluation hardware is meant to be an evaluation tool in a lab setting for Cree components and to be handled and operated by highly qualified technicians or engineers.

  • Page 2: Package Contents

    1. Introduction This Evaluation kit is meant to demonstrate the high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes (SBD) in the standard TO-247 package. It can be easily configured for several topologies from the basic phase-leg configuration. The evaluation (EVL) board can be used for the following purposes: ...
  • Page 3 Figure 1. General block diagram of Cree Discrete SiC EVL board Please note that JM1 as shown in Figure 1 is open circuit. It is necessary to short this with a wire or insert a shunt as shown in section 6.2 to complete the circuit before operation.
  • Page 4 3 shows the board attached with the heatsink provided in the kit. However, the users can use any type of heatsink that can work with the standard TO-247 package. Figure 3. Cree EVL board assembly (see Appendix for assembly instructions). 4. Configurations The EVL board can be flexible to implement difference topologies when using the different configurations of SiC MOSFETs and SiC diodes.
  • Page 5  CON2, CON5: GND Option Two:  Phase-leg, switching CON1 Phase-leg bridge with external topology with anti-parallel diode anti-parallel SiC SBD  SiC SBD used CON3  CON1, CON3: Input/output depends on which topology apply to board CON2 CON5  CON2, CON5: GND Option Three: ...
  • Page 6 Option Six:  Bridge diode with SiC Diode bridge CON1  CON1: OUTPUT (Positive)  CON3: INPUT CON3  CON2, CON5: OUTPUT (Negative) CON2 CON5 Option Seven:  Full bridge converter EVL1 CON1 H bridge topology with Phase shift or configuration using two resonant HVDC...

  • Page 7: Hardware Description

    5. Hardware Description G1212S-2W CON4 G1212S-2W W346 CON3 CON5 CON2 CON1 Figure 4. EVL board showing key connectors and components. The above figures give top view of the EVL board. The picture highlights key test points and connectors on the boards. Test points To make testing more effective and easy, the BNC connectors are added on the board to measure both Vgs and Vds waveforms for SiC MOSFET Q1 and Q2.

  • Page 8: Board Design

    SiC devices including SiC MOSFET and SiC Schottky diodes are recognized as next generation wide bandgap devices. It can provide fast switching with less loss compared to conventional Si devices. Cree is the world’s leading manufacturer of silicon-carbide Schottky diodes and MOSFETs for efficient power conversion. Two sample 20A, 1200V rated SiC MOSFET devices and two 20A, 1200V rated Schottky diodes are provided in the kit.

  • Page 9: Board Setup

    Output RMS Current Output Power Peak MOS current Switching Frequency 40KHZ Duty Cycle Dead time ~450ns Inductor 400uH Output Capacitors 300uF Cree Discrete SiC EVL Board CON1 CON4 +12V DC supply VCC_RTN 400uH 600V Input_HS CON3 DC source Input_HS_RTN PWM signal...
  • Page 10 Figure 6. Bench test setup of the EVL boards Measurements To maximize the accuracy of the measurements when using the EVL board, some suggestions are listed below: Use a highly accurate 0.0131ohm shunt (not provided in the kit) to measure ...
  • Page 11  Use of a ferrite bead (FB) on the gate pin of TO-247 MOSFETs will introduce high impedance on the gate path for MHz high frequency and reduce the Vgs ringing.  Reduce the stray capacitance of inductor with single layer structure. 12ohm 1N5819HW 5ohm...
  • Page 12 Figure 9. Vgs, Id and Vds waveforms at 9KW loading (Ch1: low-side Vds yellow 200v/div); (Ch2: low-side Id blue 100mv/0.0131ohm/div); (Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div) KIT8020CRD8FF1217P-1_UM Rev - User Manual...
  • Page 13 Figure 10. Vgs, Inductor current IL and Vds waveforms at 9KW loading (Ch1: low-side Vds yellow 200v/div); (Ch2: inductor current IL 10A/div); (Ch3: low-side Vgs pink 10v/div); (Ch4: high-side Vgs green 10v/div) The EVL board’s maximum efficiency in this configuration is around 98.9% at 4KW half load using the Yokogawa WT3000 to measure it.
  • Page 14 ‘Performance Evaluations of Hard-Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs’ Available Cree website: http://www.cree.com/Power/Document-Library ‘Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the Effects Parasitic Inductance’ Available Cree website: http://www.cree.com/Power/Document-Library ‘Design Considerations for Designing with Cree SiC Modules Part 2. Understanding the...
  • Page 15 9. Appendix Heatsink assembly instructions: 1. Apply thermal grease to the AlN thermal isolator and place it on the heatsink to align with the mounting hole. 2. Apply thermal grease to the back side of the device package and align mounting hole to the thermal isolator and heatsink.
  • Page 16 Schematic of CRD 8FF1217P-1 KIT8020CRD8FF1217P-1_UM Rev - User Manual...
  • Page 17 CON4 22-27-2101 Molex 10pin, 2.54mm, male MECH Gate Driver input CON5 7808 Skystone female, M5, 30A, 6P MECH C4D20120D C4D20120D CREE 1200V, 20A TO-247 1N5819HW 1N5819HW-7-F Diodes DIODE SCHOTTKY 40V 1A SOD123 SOD-123 C4D20120D C4D20120D CREE 1200V, 20A TO-247 1N5819HW...
  • Page 18 Res, 1% R1206 Res, 1% R1206 Res, 1% R0603 Res, 1% R0603 Res, 1% R1206 Res, 1% R1206 Res, 1% R1206 Res, 1% R1206 Res, 1% R0603 Res, 1% R0603 Res, 1% R1206 Res, 1% R0603 Res, 1% R0603 Res, 1% R0603 Res, 1% R0603...
  • Page 19 5.1V 5.1V, 350mW, 1% SOD-123 5.1V 5.1V, 350mW, 1% SOD-123 25V, 350mW, 2% SOD-123 25V, 350mW, 2% SOD-123 KIT8020CRD8FF1217P-1_UM Rev - User Manual...

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