Fairchild GreenBridge FDMQ8203 User Manual

Evaluation kit for power over ethernet 90 w active clamp forward dc-dc converter, mlp 4.5x5 greenbridge

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Summary of Contents for Fairchild GreenBridge FDMQ8203

  • Page 1 Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
  • Page 2 Clamp Forward DC-DC Converter MLP 4.5x5 GreenBridge™ Power 33/56 Shielded Gate PowerTrench® MOSFET Featured Fairchild Products: FDMQ8203 FDMS86200 FDMS8025S FDMC2523P Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 3: Table Of Contents

    Hardware Connector Description ..................6 5. Performance of Evaluation Board ..................... 7 6. Printed Circuit Board ......................10 7. Schematic ..........................11 8. Bill of Materials ........................13 9. Revision History ........................15 © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 4: Introduction

    ® PowerTrench MOSFET applying to a Power Device (PD) of Power over Ethernet (PoE). It should be used in conjunction with their datasheets as well as Fairchild’s application notes and technical support team. Please visit Fairchild’s website at www.fairchildsemi.com. Introduction This document describes the proposed solution for PoE++ PD that increases the delivering power up to 90 W.
  • Page 5: General Evaluation Board Specifications

    PWM Controller Active Clamp Forward Controller >89% Efficiency >90% At Full Load (90 W) >90% FDMQ8203 58.4°C FDMC86102 56.4°C Temperature FDMS86200 74°C At Full Load (25℃ Room Temperature) FDMC2523P 65°C FDMS8025S 88.6°C © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 6: Photographs

    Photographs Figure 2. Top Side View of Evaluation Kit Figure 3. Bottom Side View of Evaluation Kit © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 7: Setup And Test Procedure

    3. Using a voltmeter, verify that the evaluation kit provides +3.3 V across the +VOUT and –VOUT pins. –VOUT is isolated from the evaluation kit’s input VIN- and AUX- pins. Figure 4. Test Setup © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 8: Performance Of Evaluation Board

    0~27 A, 5 A Step, 3-minute soak time Figure 5. Efficiency at V =3.3 V, f =300 kHz, Soaking=3 Minutes, T =25°C Figure 6. Power Loss at V =3.3 V, f =300 kHz, Soaking=3 Minutes, T =25°C © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 9 Forward Primary Forward Secondary FDMS86200: 74.0°C FDMS8025S: 88.6°C Figure 8. Top-Side Thermal Data at V =48 V, V =3.3 / I = 27 A, f = 300 kHz, Soaking=10 Minutes, T =25°C © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 10 63.0°C 48 V 83.8°C 58.3°C 57 V 77.0°C 55.2°C Figure 9. Thermal Image Comparison: GreenBridge™ vs. Diode Bridge =3.3 V, I = 27 A, f =300 kHz, Soaking=3 Minutes, T =25°C © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 11: Printed Circuit Board

    SST (Top Side) Layer Figure 11. SSB (Bottom Side) Layer Figure 12. TOP & SMT Layer Figure 13. BOT & SMB Layer Figure 14. INNER1 (POWER) Layer Figure 15. INNER2 (GND) Layer © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 12: Schematic

    Schematic SHIELD SHIELD Green_C Orange_C Yellow_A Yellow_C Figure 16. GreenBridge™ & PD controller Block Schematic © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 13 Figure 17. Active Clamp Forward DC-DC Block Schematic © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 14: Bill Of Materials

    80 V Dual Q3,Q4,Q5,Q6 BC846BPDW1T1G ON Semiconductor Complementary 100 V 24 mΩ FDMC86102 Fairchild Semiconductor MOSFET 150 V 18 mΩ FDMS86200 Fairchild Semiconductor MOSFET 30 V 2.8 mΩ Q9,Q10,Q11,Q12 FDMS8025S Fairchild Semiconductor MOSFET © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 15 Pulse Transformer PoE++ PD LT4275 Linear Controller UCC2891PW Texas Instruments PWM Controller TLV431 Texas Instruments Shunt Regulator SFH690BT Vishay Semiconductors Phototransistor HMHA2801 Fairchild Semiconductor Opto-coupler MMSZ5231B 5.1Vz Fairchild Semiconductor MMSZ5231B 5.1Vz © 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1...
  • Page 16: Revision History

    Fairchild warrantees that its products meet Fairchild’s published specifications, but does not guarantee that its products work in any specific application. Fairchild reserves the right to make changes without notice to any products described herein to improve reliability, function, or design.
  • Page 17 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.

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