Philips MC-D370/21M Service Manual page 48

Micro system
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8M bit MULTI-PURPOSE FLASH
SST39VF080
F
B
D
UNCTIONAL
LOCK
IAGRAM
X-Decoder
Memory
Address Buffer & Latches
Address
CE#
Control Logic
OE#
WE#
A16
1
A15
2
A14
3
A13
4
A12
5
A11
6
A9
7
A8
8
Standard Pinout
WE#
9
NC
10
NC
11
NC
12
A18
13
A7
14
A6
15
A5
16
A4
17
A3
18
A2
19
A1
20
P
A
40-
TSOP
IN
SSIGNMENTS FOR
PIN
P
D
IN
ESCRIPTION
Symbol
Pin Name
Functions
A
-A
Address Inputs
To provide memory addresses. During Sector-Erase A
MS
0
lines will select the sector. During Block-Erase A
will select the block.
DQ
-DQ
Data Input/output
To output data during Read cycles and receive input data during Write
7
0
cycles. Data is internally latched during a Write cycle. The outputs are in
tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
V
Power Supply
To provide power supply voltage: 3.0-3.6V for SST39LF080/016
DD
Vss
Ground
NC
No Connection
Unconnected pins.
Note:
A
= Most significant address
MS
A
= A
for SST39LF/VF080 and A
for SST39LF/VF016.
MS
19
20
9-2
EEPROM
Cell Array
Y-Decoder
I/O Buffers and Data Latches
DQ 7 - DQ 0
396 ILL B1.1
40
A17
39
V SS
38
NC
37
A19
36
A10
35
DQ7
34
DQ6
33
DQ5
32
DQ4
31
V DD
Top View
30
V DD
29
NC
Die Up
28
DQ3
27
DQ2
26
DQ1
25
DQ0
24
OE#
23
V SS
22
CE#
21
A0
396 ILL F01.2
-A
address
MS
12
-A
address lines
MS
16
2.7-3.6V for SST39VF080/016
SYNCHRONOUS DRAM
4MX16Y3VTW
PIN ASSIGNME NT (Top Vi ew )
54- Pin TSOP
x4
x8
x16
-
-
V
DD
1
NC
DQ0
DQ0
2
-
-
V
Q
3
DD
NC
NC
DQ1
4
DQ0
DQ1
DQ2
5
-
-
VssQ
6
NC
NC
DQ3
7
NC
DQ2
DQ4
8
-
-
V
DD
Q
9
NC
NC
DQ5
10
DQ1
DQ3
DQ6
11
-
-
VssQ
12
NC
NC
DQ7
13
-
-
V
14
DD
NC
NC
DQML
15
-
-
WE#
16
-
-
CAS#
17
-
-
RAS#
18
-
-
CS#
19
-
-
BA0
20
-
-
BA1
21
-
-
A10
22
-
-
A0
23
-
-
A1
24
-
-
A2
25
-
-
A3
26
-
-
V
27
DD
CKE
CLK
CS#
CONTROL
LOGIC
WE#
CAS#
RAS#
REFRESH
COUNTER
MODE REGISTER
12
12
1
A0-A11,
ADDRESS
14
BA0, BA1
REGISTER
2
3
4
5
396 PGM T2.2
6
9-2
x16
x8
x4
-
-
54
Vss
DQ7
NC
53
DQ15
-
-
52
VssQ
NC
NC
51
DQ14
50
DQ13
DQ6
DQ3
-
-
49
V
Q
DD
Note : The # symbol indicates signal is active LOW. A dash (– )
48
DQ12
NC
NC
indicates x8 and x4 pin function is same as x16 pin function.
47
DQ11
DQ5
NC
-
-
46
VssQ
NC
NC
45
DQ10
16 Meg x 48
44
DQ9
DQ4
DQ2
Configuration
4 Meg x 4 x 4 banks
-
-
43
V
Q
DD
42
DQ8
NC
NC
Refresh Count
4K
-
-
41
Vss
Row Addressing
4K (A0-A11)
40
NC
-
-
Bank Addressing
4 (BA0, BA1)
39
DQMH
DQM
DQM
-
-
38
CLK
Column Addressing
1K (A0-A9)
-
-
37
CKE
-
-
36
NC
35
A11
-
-
34
A9
-
-
33
A8
-
-
32
A7
-
-
-
-
31
A6
-
-
30
A5
29
A4
-
-
28
Vss
-
-
FUNCTIONAL BLOCK DI AGRAM
4 Meg x 16 SDRAM
BANK3
BANK2
BANK1
12
ROW-
BANK0
12
ROW-
ADDRESS
BANK0
ADDRESS
MUX
MEMORY
2
4096
LATCH
ARRAY
&
(4,096 x 256 x 16)
DECODER
SENSE AMPLIFIERS
DATA
OUTPUT
16
REGISTER
4096
I/O GATING
2
DQM MASK LOGIC
BANK
READ DATA LATCH
CONTROL
WRITE DRIVERS
DATA
LOGIC
2
INPUT
16
REGISTER
256
(x16)
COLUMN
DECODER
COLUMN-
ADDRESS
8
8
COUNTER/
LATCH
Meg x 84
Meg x 16
2 Meg x 8 x 4 banks
1 Meg x 16 x 4 banks
4K
4K
4K (A0-A11)
4K (A0-A11)
4 (BA0, BA1)
4 (BA0, BA1)
512 (A0-A8)
256 (A0-A7)
2
DQML,
DQMH
DQ0-DQ15
16

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