Description:
The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed
primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability
under rated operating conditions. Internal impedance matching ensures optimum power gain and
efficiency over the 136−175MHz band.
Features:
D 175MHz
D 12.5 Volts
D P
= 100 Watts
OUT
D G
= 6.0dB Minimum
P
D Common Emitter Configuration
Absolute Maximum Ratings: (T
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current (Peak), I
Power Dissipation, P
Operatin Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Parameter
Static Characteristics
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
DC Current Gain
Silicon NPN Transistor
RF Power Amp, Driver
= +25°C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= +25°C unless otherwise specified)
C
Symbol
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
NTE352
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
Test Conditions
I
= 50mA, I
= 0
C
E
I
= 100mA, V
= 0
C
BE
I
= 100mA, I
= 0
C
B
I
= 10mA, I
= 0
E
C
V
= 15V, I
= 0
CE
E
I
= 5A, V
= 5V
C
CE
36V
18V
36V
20A
270W
+200°C
−65° to +150°C
0.65°C/W
Min
Typ
Max
Unit
−
−
36
V
−
−
36
V
−
−
18
V
−
−
4
V
−
−
15
mA
10
75
150
4V