Sony RM-B150 Maintenance Manual page 38

IC
CXD8889R (SONY)
C-MOS SERIAL I/O
—TOP VIEW—
49
50
51
52
53
54
55
56
57 V
DD
58 GND
59
60
61
62 NC
GND
63 V
DD
64
PIN PIN
I/O SIGNAL I/O SIGNAL
NO. NO.
1 I/O D0 17 —
2 I/O D1 18 —
3 I/O D2 19 —
4 I/O D3 20 —
5 I/O D4 21 O
6 I/O D5 22 O
7 I/O D6 23 O
8 I/O D7 24 —
9 — GND 25 —
10 — V 26 —
DD
11 — NC 27 —
12 — NC 28 —
13 — NC 29 —
14 — NC 30 —
15 — NC 31 —
16 — NC 32 —
HN58C66FP-25 (HITACHI)
HN58C66SFP25TZ
C-MOS 64 K (8192 x 8)-BIT EEPROM
—TOP VIEW—
BUSY
RDY/ 1 28
V
DD
A12 2 27
IN
A7 3 26
IN
A6 4 25
IN
A5 5 24
IN
A4 I 6 23
N
A3 7 22
IN
A2 8 21
IN
A1 9 20
IN
A0 10 19
IN
I/O 0 11 18
I/O 1 12 17
I/O 2 13 16
14 GND 15
BUSY
CE OE WE RDY/ RES
0 0 1 1
HI-Z
1 x x x
HI-Z
HI-Z → LOW
0 1 0 1
1 1
0 1 HI-Z
1 x
x x HI-Z
x 0 x HI-Z x
0 0 1 LOW 1
x x x 0
HI-Z
0 : LOW LEVEL
1 : HIGH LEVEL
x : DON'T CARE
HI-Z : HIGH IMPEDANCE
5-4
32
31
30
29
28
27
26
25
V
DD
GND 24
23
22
21
20
NC
19
18
17
PIN PIN
I/O SIGNAL I/O SIGNAL
NO. NO.
NC 33 — NC 49 — NC
NC 34 — NC 50 — NC
NC 35 — NC 51 — NC
NC 36 — NC 52 — NC
BCKO 37 I SEL 53 — NC
IVH 38 I RVD 54 — NC
TVD 39 I RESE 55 — NC
GND 40 I WRN 56 — NC
V 41 — GND 57 — V
DD DD
NC 42 — V 58 — GND
DD
NC 43 I RDN 59 I BRDI
NC 44 I CSN 60 O BRD0
NC 45 I CLK 61 O BCKO
NC 46 I A2 62 — NC
NC 47 I A1 63 — V
DD
NC 48 I A0 64 — GND
10 11
A0 I/O 0
9 12
A1 I/O 1
8 13
A2 I/O 2
WE
IN 7 15
A3 I/O 3
6 16
A4 I/O 4
RES
IN 5 17
A5 I/O 5
4 18
A6 I/O 6
A8
IN 3 19
A7 I/O 7
25
A8
A9
IN 24
A9
21
A10
A11
IN 23
A11
26
2
RES
A12
OE
OUT
1
BUSY
RDY/
A10
IN
CE OE WE
CE
IN
20 22 27
I/O 7
: ADDRESS INPUTS
A0 - A12
CE : CHIP ENABLE INPUT
I/O 6
I/O 0 - I/O 7 : DATA INPUTS/OUTPUTS
OE : OUTPUT ENABLE
I/O 5
BUSY BUSY
RDY/ : RDY/ OUTPUT
WE : WRITE ENABLE INPUT
I/O 4
RES : PROGRAM RESET INPUT
I/O 3
I/O TERMINAL FUNCTION
D READ
OUT
HI-Z STANDBY
D WRITE
IN
HI-ZL DESELECT
— WRITE INH
— WRITE INH
DATA OUT (1/07) DATA POLLING
HI-Z PROGRAM RESET
KM681000BLT-7L (SAMSUNG)FLAT PACKAGE
KM681000BLT-7LT
C-MOS 1 M (131,072 x 8)-BIT SRAM
—TOP VIEW—
A11 1
A9 2
A8 3
A13 4
WE
5
CE2 6
A15 7
8 V
DD
NC 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
A0 - A16 : ADDRESS INPUTS
I/O1 - I/O8 : DATA INPUTS/OUTPUTS
CE1
, CE2 : CHIP ENABLE1, 2 INPUTS
WE
: WRITE ENABLE INPUT
OE
: OUTPUT ENABLE INPUT
CE1 OE WE
CE2 MODE
1 x x x NOT SELECT HIGH IMPEDANCE
x 0 x x NOT SELECT HIGH IMPEDANCE
0 1 1 1 OUTPUT DISABLE HIGH IMPEDANCE
0 1 0 1 READ OUTPUT DATA
WRITE
0 1 x 0
0 : LOW LEVEL
1 : HIGH LEVEL
x : DON'T CARE
S-24S45IF10 (SEIKO I&E)FLAT PACKAGE
C-MOS 256-BIT SERIAL NVRAM
—TOP VIEW—
1
CE 1 V 8
IN DD
2
3
STORE
SK 2 7
IN 6
7
RECALL
DI 3 6
IN
DO 4 GND 5
OUT
INPUT OUTPUT
CE : CHIP ENABLE DO : SERIAL DATA
SK : SERIAL CLOCK
DI : SERIAL DATA
RECALL : RECALL
STORE : STORE
STATIC
ROW
RAM
DECODER
256-BIT
1
CE
INSTRUCTION COLUMN
3
DI
REGISTER DECODER
2
SK
INSTRUCTION 4-BIT
DECODER COUNTER
OE
32
31 A10
CE1
30
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
GND 24
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
20 21
A0 I/O1
19 22
A1 I/O2
18 23
A2 I/O3
17 25
A3 I/O4
26
16
A4 I/O5
15 27
A5 I/O6
14 28
A6 I/O7
I/O TERMINAL
13 29
A7 I/O8
3
A8
2
A9
31
A10
1
A11
INPUT DATA
12
A12
4
A13
11
A14
7
A15
10
A16
OE WE CE1 CE2
32 5 30 6
4
CE DO
SK
DI
RECALL
STORE
6
RECALL
CONTROL
7
STORE
LOGIC
8
V
DD
5
GND
4
DO
RM-B150