Memory - LG KS360 Service Manual

3.7 Memory

1Gbit NAND Flash & 512Mbit SDRAM employed on KS360 series with 8 bit bus for NAND and 16bit
bus for SDRAM thru ADD(0) ~ ADD(24). The 1Gbit NAND Flash memory with SDRAM stacked device
family offers multiple high-performance solutions.
DATA(0:7)
1V8_VSD2
FCDP
R111
M_RESET
1
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
DATA(0:15)
DATA(0) B3
DQ0
DATA(1) C4
DQ1
DATA(2)
C3
DQ2
DATA(3) D4
DQ3
DATA(4) D3
DQ4
DATA(5) E4
DQ5
DATA(6) E3
DQ6
DATA(7) F4
DQ7
DATA(8) J4
DQ8
DATA(9) K3
DQ9
DATA(10) K4
DQ10
DATA(11) L3
DQ11
DATA(12) L4
DQ12
DATA(13) M3
DQ13
DATA(14) M4
DQ14
DATA(15) N3
DQ15
E9
SDRAM_CS _CS
R105 22
SDCLKI
R106 22 H4
SDCLKO CLK
TP102 G8
CKE CKE
F8
TP104
_WR _WED
D7
ADD(13) BA0
D8
ADD(14) BA1
E7
_RAS _RAS
F7
_CAS _CAS
G3
_BC0 LDQM
H3
_BC1 UDQM
DATA(0) J5
IO0
DATA(1) L5
IO1
DATA(2) J6
IO2
DATA(3)
L6
IO3
DATA(4) J7
IO4
DATA(5)
L7
IO5
DATA(6)
J8
IO6
DATA(7) L8
IO7
C6
FLASH1_CS _CE
D5
ADD(16) ALE
C5
ADD(17) CLE
TP105 E5
_RD _RE
E6
R__B
D6
_WR _WE
F5
_WP
Figure 9. Memory Circuit
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3. TECHNICAL BRIEF
C7
TP100
A0
C8
A1
C9
A2
B8
A3
M9
A4
L9
A5
K9
A6
J9
A7
H7
A8
H8
A9
D9
A10
H9
A11
G7
A12
B4
VDD1
G9
VDD2
H2
VDD3
M2
VDD4
D2
VDDQ1
F2
U100
VDDQ2
K2
VDDQ3
K5D1G12ACD-D075
C2
VSS1
F9
VSS2 C131
G2
VSS3 0.1u
N4
VSS4
E2
VSSQ1
J2
VSSQ2
L2
VSSQ3
B6
VCC1
N7
VCC2
N6
VCCQ
C136
0.1u
B5
VSS5
N5
VSS6
N8
VSS7
ADD(0:12)
ADD(0)
ADD(1)
ADD(2)
ADD(3)
ADD(4)
ADD(5)
ADD(6)
ADD(7)
ADD(8) 1V8_VSD2
ADD(9)
ADD(10)
ADD(11)
ADD(12) 1V8_VSD2
C132 C133 C134 C135
0.1u 0.1u 0.1u 0.1u
1V8_VSD2
C137 C138
0.1u 0.1u
LGE Internal Use Only