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REPLACEMENT
PARTS LIST......P.c.B. and Wiring Parts
Notes:
1. The
marking
(RTL)
indicates
that the
Retention
Time
is
2. Important safety notice
limited
for this
item.
After
the
discontinuation
of this
Components identified by A\ mark have special characteris-
assembly in production, the item will continue to be avail-
tics important
for safety.
When
replacing
any of these
able for a specific period of time.
The retension
period
components, use only manufacturer's specified parts.
of availability is dependant
on the type of assembly,
and
3. The
"S"
mark
is service
standard
parts
and
may
differ
in accordance
with
the
laws
governing
part and
product
from production parts.
retention.
;
4. © mark are new parts.
After the end of this period, the assembly will no longer
5. For part No. with area mark, check the area when placing
be available.
an order.
Mi PRINTED CIRCUIT BOARD
Cs
Oj} RTL
SXPG214631
Other areas
SXPG215011
SXPG216011
SXPG216031
SXPG216041
Other areas
Tf
Eo
ee
OMPONENT
COMBINATIONS
Cc
24
EXBS8VOR00
214, 15, 17, 18
EXBS8V222J
231~35
EXBV8V471J
Z36
EXBS8V471J
Z45~47
EXBV8V102J
COIL
:
:
;
RESISTORS
1
io)
oO
1
1
1
1
own
—
SXPG217011
SXPG217031
SXPG210811
SXPG214831
SXPG209741A
SXPG209741B
QD
(2) vu
O OO
O000
PARR
BEEEE
MKB1
MKB2
pabihest s
—
R1
ERJ6GEYJ101V
1
R2
ERJ6GEYJ103V
1
R3
ERJ6GEYOROOV
1
R4
ERJ6GEYJ104V
1
R5
ERJ6GEYJ471V
1
MAIN CIRCUIT
R6, 7
ERJ6GEYJ331V
2
R8, 11~13
ERJ6GEYJ103V
4
R14
ERIGGEYJO30V
1C1
D70325GJ-10
16 bit Microcomputer
1
abs
Saeed
:
Ic2
D65012GF-A79
Gate Array
1
R18
ERUJGGEYJ471V
1
IC3
QSIG0O3C02007.
«| 2M bit Programmed ROM
| 1
R19
ERJOGEY J682V
;
ic4
ATT7C256BF85_ —«| 256K bit Static RAM
1
R20, 21
ERJ6GEYJ103V
i
C5
TG25540AF006
Tone Generator LSI
1
R22
ERJ6GEYJ682V
{
IC6
D6382GF-3B9
Digital Signal Processor
1
R23
ERU6GEYJ103V
1
IC7
QSIGHSC16D48_|
16M bit Wave ROM
1
R26, 27
ERJBGEY J682V
s
1c9
QSIGH3C16D88
16M bit Wave ROM —
1
R28, 29
ERJEGEYJ104V
iC10, 11
HM65256BLF10 '| 256K
bit Pseudo Static RAM | 2
R20~32
ERJEGEYJ102V
5
1C12, 13
PCM1702U
DA Converter
2
R34
ERJ6GEYu224V
1
1C14
D74HC164GS
Shift Resister
1
Ra6
ERJ6GEYJ104V
;
C15
D74HC11GS
3 input AND GATES
1
R37
ERJGGEYJ472V
;
IC16
D74HCO0GS
Quad 2 input NAND GATES | 1
R38, 39
reer ey
:
IC18
LC3517AML-10
[2K bit Static RAM
1
R40
ERJEGEYJ472V
i
1C19, 20
M5218AFP
Operational Amplifier
2
R41
ERJ6GEYJ102V
1
TRANSISTORS
R43
ERJ6GEYJ333V
1
DSA1BAS
Trandletor
R44, 45
ERJ6GEYJ151V
2
28C01815GR
Transistor
R46, 47
ERJ6GEYJ102V
2
2SA1015-GR
2SA933STRS (SUB. Part)
as
iniaacat abcde
2
25B709ARTW _| Transistor
bine
ERUSGEYJIRGY
1
2SD601AQTW _| Transistor
a)
ESS er l02N
1
28J106Y
FET
R52
ERJ6GEYJ682V
1
R53
ERJ6GEYJ471V
1
DIODES
R54, 55
ERJ6GEYJ473V
2
MA8047
Zener, 4.7V
1
R57
ERJ6GEYJ102V
1
MA110
Diode
6
R58, 59
ERJ6GEYJ222V
2
MA8062
Zener, 6.2V
2
R61, 62
ERJ6GEYJ103V
2
MA8056
Zener, 5.6V
1
R64
ERJ6GEYOROOV
1
MA2062LF
Zener, 6.2V
1
R65
ERJ6GEYJ103V
1
EKo4
Diode
1
R67, 68
ERJ6GEYJ102V
2
R69
ERJ6GEYJ103V
1
OSCILLATORS
R70
ERJGGEYJ222V
1
x1
QSXG1A1800A
18MHz Quartz Oscillator
1
R71~74
ERJGGEYJ102V
4
x3
QSXG2F2500A
—«| 25MHz Ceramic Oscillator | 1
R75, 76
ERJ6GEYJ103V
2
Iii- 1
[rere [ rane [_twetnton ra
R77
0Q
1
ERJ6GEYOROOV
C9, 12, 13, 18
ECUV1H104ZFX
0.1uF
4
ERJ6GEYJ332V
1
C23, 29, 37
ECUV1H104ZFX
0.1 pF
3
ERJ6GEYJ103V
1
ERJ6GEYOROOV
1
ERJ6GEYJ102V
1
:
ERJ6GEYJ103V
3
Bey
;
AC POWER SUPPLY CIRCUIT
ERJ6GEYJ102V
1
ERJ6GEYJ221V
1
LINE FILTER
See
{ | [Tx aseratrs Jenene
TT
ERJ6GEYJ224V
2
ERJ6GEYOROOV
o{|—"'ACK
eC
Cd
JK1
A | SJVD0203B
AC Inlet
SWITCH
CAPACITORS
ECEA1VU470
47uF, 35V
1
ECUV1H104ZFX
| 0.1pF
1
SSRG100A
Voltage Selector,
Sue
| Gees
;
ECEA0JU102
1000pF, 6.3V
1
ECUV1H104ZFX
| 0.1pF
2
F1
AV | XBA1C63NU100
=| T6.3A, 125V,
ECUV1H101UG
| 100pF
2
ECEA1HKNO10: | 1yF, 50V
2
F1
A | XBA2C31TBO
T3.15A, 250V,
ECUV1H104ZFX
| 0.1uF
10
EECS5R5V105
1F,5.5V, Memory Back-up | 1
F2
A | XBA2C20TBO
T2A, 250V,
C30, 31, 33~35, 38 | ECUV1H104ZFX =| O.1F
6
C40~45, 48~51, 53 | ECUV1H104ZFX
| 0.1pF
1
F3
A\ | XBA2C20TBO
T2A, 250V,
C54
ECQBIH153JF =| 0.015yF
1
except
C55
ECUV1H471JG
470 pF
1
CAPACITORS
c56
ECQB1H153JF =| 0.015yF
1
C57
ECUV1H471UG
470pF
1
C1
A | ECKCVA1472MF
4700pF, Line Capacitor
C59, 60, 62, 63, 66 | ECUV1H104ZFX | 0.1pF
5
C2
A} ECQU2A104MN = 0.1), 250V,
C89, 70, 80,81
| ECUV1H104ZFX
|0.1pF
4
Across-the Line Capacitor
C82
ECUV1H220JN
| 22pF
1
C84, 85
ECUV1H102JX
| 0.001 nF
2
C86, 87
ECUV1HO30CCN_ | 3pF
2
ECUVIH330JCN | 33pF
1
AMP & POWER SUPPLY CIRCUIT
ECUVIH150JCN
| 15pF
1
couvnicrx |o:nr
:
[Fore [__twctnion Yr
INTEGRATED CIRCUITS
SVIGM5F7815
+15V Voltage Regulator
1
SVIGM5F7915
—15V Voltage Regulator
1
$ | 1C5~10
SVIGM5218L
Operational Amplifier
6
TRANSISTORS
Q1, 3
2SC3940ARS
Transistor
2
Q2, 4
2SA1534AR
Transistor
Q5, 6, 13, 15, 19, | 25A1015-GR
2SA933STRS (SUB. Part)
22
fate [pene | oeetpion [ra
INTEGRATED CIRCUITS
TC25540AF006
Tone Generator LSI
QSIGH3C16D49
16M bit Wave ROM
1
1
O
QSIGH3C16D89_
| 16M bit Wave ROM
1
O
D74HCO4GS
6 Inverter
1
Q7, 11, 12, 14, 18 | 25C1815GR
Transistor
e)
D74HC10GS
3 input NAND GATES
1
Q16, 20
2SB946P
Transistor
Oo
D74HC74GS
D-type Flip fipos
1
Q17, 21
28D1271P
Transistor
QO} IC8~10
D74HC595GS
Shift Resister
3
O}1IC11~13
D74HC166GS
Shift Resister
3
SVDGERA1502
SVDS3V20
MA4180
MA165
EK04
Rectifier
Rectifier
Zener, 18V
Diode
Diode
D1, 2
A
D3~10
A
D11, 12
D15, 19, 20, 27, 28
D16, 33
Pe
Jasssvoisn [aot cua Osataor [|
COMPONENT
COMBINATIONS
oan [exevewr —[eronee
id
R11
ERJ6GEYJ681V
6800
1 1
:
CAPACITORS
Ct
ECUV1HO30CCN
| 3pF
1
C3
ECUV1IH101G
100 pF
1
except [ll
T2.5A, 125V,
only
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