Prevention Of Electrostatic Discharge (Esd) To Electrostatically Sensitive (Es) Devices - Panasonic TX-32LXD500 Service Manual

The limit value U = 35 V (peak) for a. c. correspond to the value 70 mA (peak) a. c. for
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frequencies greater than 100 kHz.
7. In case a measurement is out of the limits specified, there is a
possibility of a shock hazard, and the equipment should be
repaired and rechecked before it is returned to the customer.
2. Prevention of Electro Static Discharge (ESD) to
Electrostatically Sensitive (ES) Devices
Some semiconductor (solid state) devices can be damaged easily by static electricity. Such
components commonly are called Electrostatically Sensitive (ES) Devices. Examples of typical
ES devices are integrated circuits and some field-effect transistors and semiconductor "chip"
components. The following techniques should be used to help reduce the incidence of
component damage caused by electro static discharge (ESD).
1. Immediately before handling any semiconductor component or
semiconductor-equipped assembly, drain off any ESD on your
body by touching a known earth ground. Alternatively, obtain and
wear a commercially available discharging ESD wrist strap, which
should be removed for potential shock reasons prior to applying
power to the unit under test.
2. After removing an electrical assembly equipped with ES devices,
place the assembly on a conductive surface such as alminum foil,
to prevent electrostatic charge buildup or exposure of the
assembly.
Figure 1
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