LG -D722V Service Manual page 240

Level Location no
R10069
R10070
R4107
6 R4108 Resistor,Chip
R4133
R7300
R7401
Inductor,Multilayer,
6 L5111
Chip
Capacitor,Ceramic,
6 C5001
Chip
C2300 Capacitor,Ceramic,
6
C2385 Chip
C2107
C5143 Capacitor,Ceramic,
6
C5145 Chip
C9101
Capacitor,Ceramic,
6 C9502
Chip
6 U4100 IC,PMIC
Capacitor,Ceramic,
6 C5000
Chip
C4120
C4121
C4125
C4126
Capacitor,Ceramic,
6 C4127
Chip
C4129
C4190
C4194
C9103
Capacitor,Ceramic,
6 C1403
Chip
Inductor,Wire
6 L4136
Wound,Chip
R4135
6 R4138 Wire Pad,Open
R9512
LGE Internal Use Only
12. EXPLODED VIEW & REPLACEMENT PART LIST
Description P/N
ERHY0009501
EAP62107901
ECCH0009101
ECCH0009207
EAE62286801
ECZH0025916
EAN62739601
ECCH0017601
EAE62762301
EAE62282201
EAP62106301
SAFO0000401
Specification
MCR006YZPJ000 0OHM 5% 1/20W 0603 R/TP -
ROHM.
LQP03TG1N5C02D 1.5NH 0.2NH - 600mA - -
0.15OHM 6GHZ 13 SHIELD - 0.6X0.3X0.3MM R/TP
MURATA MANUFACTURING CO.,LTD.
C0603X5R0J104KT00NN 0.1uF 10% 6.3V X5R -
55TO+85C 0603 R/TP - TDK CORPORATION
GRM033R71A682K 6.8nF 10% 10V X7R -
55TO+125C 0603 R/TP - - MURATA
MANUFACTURING CO.,LTD.
CL03A104KP3NNNC 0.0000001F 10% 10V X5R -
55TO+85C 0603 R/TP 0.3 - SAMSUNG ELECTRO-
MECHANICS CO., LTD.
GRM0335C1E330J 33pF 5% 25V NP0 -55TO+125C
0603 R/TP - - MURATA MANUFACTURING
CO.,LTD.
PM8926 2.5 to 4.5V adj 0W CSP R/TP 172P -
QUALCOMM INCORPORATED.
CL05A475MQ5NRNC 4.7uF 20% 6.3V X5R -
55TO+85C 1005 R/TP 0.5MM - SAMSUNG
ELECTRO-MECHANICS CO., LTD.
CL03A105MP3NSNC 1uF 20% 10V X5R -
55TO+85C 0603 R/TP 0.33 MM - SAMSUNG
ELECTRO-MECHANICS CO., LTD.
GRM033R71E102KA01D 0.000000001F 10% 25V
X7R -55TO+125C 0603 R/TP 0.3+/-0.03 MM -
MURATA MANUFACTURING CO.,LTD.
1239AS-H-100N=P2 10UH 30% 30V 700mA 1 0.7
0.46OHM - - SHIELD 2.5X2.0X1.2MM NONE R/TP
TOKO, INC.
AX3100 ATL SV_SHIPBACK,MAIN,A,0OHM DNI
- 240 - Copyright © 2014 LG Electronics. Inc. All right reserved.
Remark
Only for training and service purposes