LG -V909DW Service Manual page 243

Level Location No. Description
R1300,
6 Resistor, Chip
R1302
C1218,
C1219,
C1220,
Capacitor,
6 C508,
Ceramic, Chip
C509,
C510,
C531
C1216,
C1217,
C313,
Capacitor,
6 C400,
Ceramic, Chip
C407,
C502,
C541
R415,
R416,
6 Resistor, Chip
R420,
R507
6 R503 Resistor, Chip
C302,
C318,
Capacitor,
6 C319,
Ceramic, Chip
C332,
C333
D300,
6 D401, Diode, Switching
D510
L507, Inductor, Wire
6
L508 Wound, Chip
C1137,
C1138,
Capacitor,
6 C1153,
Ceramic, Chip
C1154,
C430
C424, Capacitor,
6
C901 Ceramic, Chip
Capacitor
6 BAT300
Assembly
Q202,
Q407,
6 FET
Q500,
Q501
LGE Internal Use Only
12. EXPLODED VIEW & REPLACEMENT PART LIST
PartNumber
MCR01MZP5F1003 100KOHM 1% 1/16W 1005 R/TP -
ERHZ0000204
ROHM.
CL05A225MP5NSNC 2.2uF 20% 10V X5R -55TO+85C
ECCH0007804 1005 R/TP 0.5MM SAMSUNG ELECTRO-MECHANICS
CO., LTD.
ECJ1VB1A475M 4.7uF 10% 10V X5R -55TO+85C 1608
ECCH0007802
R/TP - KYOCERA CORP.
MCR01MZP5J105 1MOHM 5% 1/16W 1005 R/TP -
ERHZ0000407
ROHM.
RC0402FR-071M5L 1.5MOHM 1% 1/16W 1005 R/TP -
ERHY0013401
YAGEO CORPORATION
GRM188R60J106M 10000000 pF, 6.3V, M, X5R, TC,
ECCH0005604 1608, R/TP, 0.8 mm MURATA MANUFACTURING CO.,
LTD.
1SS385FV 1SS385FV, 1-1Q1A, 15 V, 100 mA, R/TP
EDSY0018701
TOSHIBA
CIG22H2R2MNE 2.2 uH, M, 2.5*2.0*1.2, R/TP, 0.0000022,
20%, 1.2A, 0.116 ohm, SHIELD, 2.5X2MM, NONE, R/TP,
ELCP0012501
Inductor, Wire Wound, Chip SAMSUNG ELECTRO-
MECHANICS CO., LTD.
C1005C0G1H101JT 100pF 5% 50V NP0 -55TO+125C
ECZH0000813
1005 R/TP - TDK KOREA COOPERATION
MCH153CN103KK 10nF 10% 16V X7R -55TO+125C 1005
ECCH0000155
R/TP - ROHM Semiconductor KOREA CORPORATION
PAS311HR-VG1 3.8 Backup Capacitor 0.03F, Module
SMZY0023501
Assembly, KOREA TAIYO YUDEN.CO., LTD.
KTK5132E N-CHANNEL MOSFET 30V +-20 100mA
EQFN0005601
7OHM 100mW ESM R/TP 3P KEC CORPORAITION
- 243 -
Spec
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Only for training and service purposes
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