LG GB160 Service Manual page 32

Nor Flash Memory Features
‧ Organization: 8M × 16 bits
‧ Power dissipation
Read operating :
Address Increment Read operation: 24 mA maximum
Page Read operating :
Program / Erase operating:
Standby :
‧
Access time :
Random : 70 ns @CL=30pF
Page : 25 ns @CL=30pF
‧ Functions
Simultaneous Read/Write
Page read
Auto-Program , Auto Page Program
Auto Block Erase , Auto Chip Erase
Program Suspend / Resume
Erase Suspend/Resume
Data polling / Toggle bit
Password block protection
Block Protection/Boot Block Protection
Automatic Sleep, supports for hidden ROM Area
Common Flash Memory Interface (CFI)
‧ Block erase architecture
8 × 8 Kbytes / 127 × 64 Kbytes
‧ Bank architecture
16 Mbits × 8 Banks
‧ Boot block architecture
TV00570002CDGB : top boot block
TV00570003CDGB : bottom boot block
‧ Mode control
Compatible with JEDEC standard commands
‧ Erase/Program cycles
100,000 cycles typ.
55 mA maximum
5 mA maximum
15 mA maximum
10 μA maximum
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