Transistors
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■ Features
• High transition frequency f
• Small collector output capacitance C
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
ob
= 25°C
a
Symbol
Rating
−50
V
CBO
−50
V
CEO
−5
V
EBO
−50
I
C
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
200 to 400
250 to 500
Unit
V
V
V
mA
Marking Symbol: AL
mW
°C
°C
Conditions
= −10 µA, I
= 0
E
= −1 mA, I
= 0
B
= −10 µA, I
= 0
C
= −10 V, I
= 0
E
= −10 V, I
= 0
B
= −10 V, I
= −2 mA
C
= −10 mA, I
= −1 mA
B
= −10 V, I
= 2 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
SJC00028BED
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10˚
SMini3-G1 Package
Min
Typ
Max
−50
−50
−5
− 0.1
−100
200
500
− 0.1
− 0.3
250
1.5
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V
µA
µA
V
MHz
pF
1