Transistors
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I
V
CBO
CB
I
V
EBO
CE
*
h
V
FE1
CE
h
V
FE2
CE
= −10 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
t
Refer to the switching time
on
t
measurement circuit
off
t
stg
Q
R
50 to 120
90 to 150
AXQ
AXR
10˚
Unit
V
V
V
mA
mA
Marking Symbol: AX
mW
°C
°C
Conditions
= −8 V, I
= 0
E
= −3 V, I
= 0
C
= −1 V, I
= −10 mA
C
= −1 V, I
= −1 mA
C
= −1 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
No-rank
50 to 150
AX
SJC00027BED
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
SMini3-G1 Package
Min
Typ
Max
− 0.1
− 0.1
50
150
30
− 0.1
− 0.2
800
1 500
1
12
20
19
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
µA
µA
V
MHz
pF
ns
ns
ns
1