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MMT05B350T3
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Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
•
High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled
Temperature Environments
•
The MMT05B350T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68
•
Bidirectional Protection in a Single Device
•
Little Change of Voltage Limit with Transient Amplitude or Rate
•
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
•
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
•
Surface Mount Technology (SMT)
•
Indicates UL Recognized − File #E210057
•
Pb−Free Package is Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Off−State Voltage − Maximum
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25°C Initial Temperature)
(Notes 1 and 2)
2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
Preferred Devices
Symbol
V
DM
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
I
TSM
di/dt
50 AMP SURGE, 350 VOLTS
Value
Unit
300
V
A(pk)
±150
±150
(Note: Microdot may be in either location)
±100
±100
±70
±70
±50
Device
32
A(pk)
MMT05B350T3
"300
A/ms
MMT05B350T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
BIDIRECTIONAL TSPD
MT1
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
AYWW
RPBM G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
RPBM = Specific Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
SMB
12 mm Tape & Reel
(2.5 K/Reel)
SMB
12 mm Tape & Reel
(Pb−Free)
(2.5 K/Reel)
Publication Order Number:
MMT05B350T3/D
(
)
MT2
†
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Summary of Contents for ON Semiconductor MMT05B350T3
- Page 1 2. Measured under pulse conditions to reduce heating. Preferred devices are recommended choices for future use This document contains information on a product under development. ON Semiconductor and best overall value. reserves the right to change or discontinue this product without notice.
-
Page 2: Thermal Characteristics
MMT05B350T3 THERMAL CHARACTERISTICS Characteristic Symbol Unit °C Operating Temperature Range Blocking or Conducting State −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only + 175 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS = 25°C unless otherwise noted) - Page 3 MMT05B350T3 = 50V 0.01 0.001 −60 −40 −20 −60 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 1. Typical Off−State Current versus Figure 2. Typical Breakdown Voltage versus Temperature Temperature −60 −40 −20 −40 −20 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Maximum Breakover Voltage versus Figure 4.
- Page 4 MMT05B350T3 TELECOM OUTSIDE EQUIPMENT PLANT RING PPTC* TELECOM OUTSIDE EQUIPMENT PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TELECOM OUTSIDE EQUIPMENT PLANT RING HEAT COIL http://onsemi.com...
-
Page 5: Package Dimensions
SCALE 8:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. - Page 6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor MMT05B350T3 MMT05B350T3G MMT08B350T3...