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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
www.irf.com
PRELIMINARY
Parameter
@ 10V
GS
@ 10V
GS
Parameter
HEXFET
D
G
S
Max.
100
71
400
170
1.11
± 20
350
60
17
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
PD- 9.1724A
IRF1104
®
Power MOSFET
V
= 40V
DSS
R
= 0.009
DS(on)
I
= 100A
D
TO-220AB
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Max.
Units
0.90
–––
°C/W
62
1
4/24/98
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Summary of Contents for International Rectifier PhotoSmart 335
- Page 1 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Page 2 IRF1104 Electrical Characteristics @ T Parameter Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS Static Drain-to-Source On-Resistance DS(on) Gate Threshold Voltage GS(th) Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time d(on) Rise Time...
- Page 3 1000 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ° T = 175 C ° T = 25 C 20µs PULSE WIDTH , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1000 20µs PULSE WIDTH...
- Page 4 IRF1104 5000 4000 C iss 3000 2000 C oss 1000 C rss , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 175 C ° ° T = 25 C ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage f = 1MHz SHORTED...
- Page 5 LIMITED BY PACKAGE T , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature D = 0.50 0.20 0.10 0.05 0.02 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a.
- Page 6 IRF1104 V D S D .U .T I A S 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 10 V Charge Fig 13a. Basic Gate Charge Waveform 1 5V D R IV E R V D D (B R )D S S Fig 12c.
- Page 7 D.U.T Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent = 5V for Logic Level Devices www.irf.com Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer dv/dt controlled by R Driver same type as D.U.T.
-
Page 8: Package Outline
IRF1104 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (.58 4) 14.09 (.55 5) 13.47 (.53 0) 1 .40 (.0 55) 1 .15 (.0 45) 2.54 (.100) N O T E S : 1 D IM E N S IO N IN G &...