Fairchild 2N4123 Specification

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2N4123
C
B E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings*

Symbol
V Collector-Emitter Voltage
CEO
V Collector-Base Voltage
CBO
V Emitter-Base Voltage
EBO
I Collector Current - Continuous
C
Operating and Storage Junction Temperature Range
T , T
stg
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol
P Total Device Dissipation
D
Derate above 25 C
R Thermal Resistance, Junction to Case
JC
Thermal Resistance, Junction to Ambient
R
JA
2001 Fairchild Semiconductor Corporation
TO-92
TA = 25°C unless otherwise noted
Parameter
TA = 25°C unless otherwise noted
Characteristic
Value Units
30
40
5.0
200
-55 to +150
Max Units
2N4123
625
5.0
mW/ C
83.3
200
V
V
V
mA
C
mW
C/W
C/W
2N4123, Rev A