LG KS20 Operating Instructions Manual page 28

3. TECHNICAL BRIEF
3.5.5. GSM PAM (U501:TQM7M5003)
The TQM7M5003 is an extremely small (7 x 7 mm), GSM/EDGE PAM for handset
applications. This module has been optimized for excellent EDGE efficiency and Pout in a
Polar Loop environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency.
The small size and high performance is achieved with high-reliability 3
technology. With 50Ω and output, no external matching or bias components are required. The module
incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. Each amplifier
has three gain stages with on-die inter-stage matching implemented with a high Q passives technology
for optimal performance. The CMOS controller implements a fully integrated power control within the
module for GSM operations, and serves as the AM/AM path in EDGE operations. This eliminates the
need for any external couplers, power detectors, current sensing etc., to assure the output power level.
The module has Tx enable and band select inputs. Module construction is a low-profile overmolded
landgrid array on laminate.
C539
4.7p
C541
15p
LGE Internal Use Only
GSM_PA_BAND
LOW
HIGH
VBAT
C533
C534
100p
22u
(1608)
TQM7M5008
C540
14 1
GND6 DCS_PCS_IN
33p
13 2
GND5 BS
L512
12 3
2.2nH
VCC TX_EN
U501
11 TQM7M5008 4
GND4 VBATT
10 5
GND3 GND1
L513
9 6
GSM_OUT VRAMP
6.8nH
8 7
GND2 GSM_IN
L514
12nH
[Figure 1. 8] GSM PAM Schematic
- 30 -
generation InGaP HBT
rd
MODE
GSM
DCS/PCS
R510
GSM_PA_RAMP
2.2K
C538
68p
GSM_PA_BAND
GSM_PA_EN
4 5
FL501
O1 G3
1
IN
EFCH897MTDB1
G2 G1
SFSY0030201
3 2
Copyright © 2007 LG Electronics. Inc. All right reserved.
R511
DCS_PCS_TX
18
R512 R513
300 300
3 dB
R514
GSM_TX
18
R515 R516
300 300
3 dB
Only for training and service purposes