Philips ISP1122A Product Data page 26

Philips Semiconductors
handbook, full pagewidth
POWER SUPPLY
+4.85 V(min)
V CC
GND
100 Ω
to
1 kΩ
INDV
SP/BP
OPTION
Power switches 1 to 5 are low-ohmic PMOS devices as specified in
Fig 10. Mode 5: self-powered hub; individual port power switching; individual overcurrent detection.
9397 750 08958
Product data
+4.85 V(min)
+
5 V
± 3% −
330 kΩ
(5×)
PSW1/GL1
PSW2/GL2
PSW3/GL3
PSW4/GL4
PSW5/GL5/GPSW
ISP1122A
OC1
OC2
OC3
OC4
OC5/GOC
Rev. 03 — 30 October 2001
low-ohmic
PMOS switch
1
0.1 µF
47 kΩ
low-ohmic
PMOS switch
2
0.1 µF
47 kΩ
low-ohmic
PMOS switch
3
0.1 µF
47 kΩ
low-ohmic
PMOS switch
4
0.1 µF
47 kΩ
low-ohmic
PMOS switch
5
0.1 µF
47 kΩ
Section 12.2.
ISP1122A
USB stand-alone hub
downstream
ports
ferrite bead
V BUS
+4.75 V
120
D+
(min)
µF
D− 1
GND
SHIELD
ferrite bead
V BUS
+4.75 V
120
D+
(min)
µF
D− 2
GND
SHIELD
ferrite bead
V BUS
+4.75 V
120
D+
(min)
µF
3
D−
GND
SHIELD
ferrite bead
V BUS
+4.75 V
120
D+
(min)
µF
D− 4
GND
SHIELD
ferrite bead
V BUS
+4.75 V
120
D+
(min)
µF
D− 5
GND
SHIELD
MBL170
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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