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bq78350-R1 TRM Addendum for the bq78350-R2 Device
This document is an addendum to the bq78350-R1 Technical Reference Manual (TRM, SLUUBD3) and
discusses modifications relating to the bq78350-R2 device. Items not discussed in this addendum have
not changed.
Notational Conventions
Information Type
Commands
Data Flash (DF)
Register bits and flags
Data flash bits
Modes and states
Related Documentation from Texas Instruments
The following is related documentation:
1. bq78350-R1 Technical Reference Manual (SLUUBD3)
2. bq78350-R1 CEDV Li-Ion Gas Gauge and Battery Management Controller Companion to the bq769x0
Battery Monitoring AFE Data Sheet (SLUSCD0)
3. bq78350 Data Memory Programming for Mass Production Application Report (SLUA742)
Trademarks
All trademarks are the property of their respective owners.
Glossary
TI Glossary
— This glossary lists and explains terms, acronyms, and definitions.
SLUUBM6 – March 2018
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Formatting Convention
Italics with parentheses and no breaking spaces
Italics, bold, and breaking spaces
Brackets and italics
Brackets, italics, and bold
ALL CAPITALS
Copyright © 2018, Texas Instruments Incorporated
Example
RemainingCapacity() command
Design Capacity data
[TDA] bit
[LED1] bit
UNSEALED mode
bq78350-R1 TRM Addendum for the bq78350-R2 Device
Preface
SLUUBM6 – March 2018
1
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Summary of Contents for Texas Instruments bq78350-R1
- Page 1 SLUUBM6 – March 2018 bq78350-R1 TRM Addendum for the bq78350-R2 Device This document is an addendum to the bq78350-R1 Technical Reference Manual (TRM, SLUUBD3) and discusses modifications relating to the bq78350-R2 device. Items not discussed in this addendum have not changed.
- Page 2 To use the bq78350-R2 device, customers must order the catalog bq78350-R1 device from TI.com, and program the device with the TI-provided bq78350-R2 firmware. Thus, the package and pinout will remain the same as the bq78350-R1 device, with the exception of some modified functionality associated with the GPIO_B pin.
- Page 3 0 = The bq78350-R2 device configures the GPIO_B as active low (default). 1 = The bq78350-R2 device configures the GPIO_B as active high, requiring an external pull up. SLUUBM6 – March 2018 Overview Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 4 Command Changes for PRE-DISCHARGE Mode 3.1.2.1 ManufacturerAccess() 0x0057 ManufacturingStatus This command returns the ManufacturingStatus() flags on ManufacturerBlockAccess() or ManufacturerData(). A new [PDSG_TEST] bit was added here for the bq78350-R2 device. Overview SLUUBM6 – March 2018 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 5 _TEST PDSG PCHG Low Byte BBR_EN PF_EN LF_EN FET_EN DSG_TEST CHG_TEST _TEST _TEST PDSG_TEST: Pre-Discharge FET Test 0 = Disabled 1 = Pre-discharge FET test activated SLUUBM6 – March 2018 Overview Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 6 NOTE: The GPIO mode should not be used on GPIO_B while the PRE-DISCHARGE mode is used. JEITA Charge Control The existing bq78350-R1 device does not include JEITA charge control. This functionality is added in the bq78350-R2 device. NOTE: Some existing data flash addresses were modified from bq78350-R1 device to accommodate the extra address space required for this feature.
- Page 7 Standard Temp Charging → Current Low • Standard Temp Charging → Current Med Standard Temp Charging → Current High • • High Temp Charging → Voltage SLUUBM6 – March 2018 Overview Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 8 3.2.3.4 Current High Class Subclass Name Type Default Unit Advanced Charging Low Temp Current High 32767 Algorithms Charging Description: Low temperature range high voltage range ChargingCurrent() Overview SLUUBM6 – March 2018 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 9 Current Low Class Subclass Name Type Default Unit Advanced Charging High Temp Current Low 32767 1012 Algorithms Charging Description: High temperature range low voltage range ChargingCurrent() SLUUBM6 – March 2018 Overview Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 10 3520 Algorithms Charging Description: Recommended temperature range high voltage range ChargingCurrent() 3.2.7 Pre-Charging Pre-Charging → Current is retained, while Start Voltage and Recovery Voltage are removed. Overview SLUUBM6 – March 2018 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 11 Charging Voltage Med Class Subclass Name Type Default Unit Advanced Charging Charging Voltage Voltage Range 32767 3600 Algorithms Description: Charging Voltage Low range to Charging Voltage Med range. SLUUBM6 – March 2018 Overview Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated...
- Page 12 LPEN Functionality Modified The existing bq78350-R1 device includes the [LPEN] feature, which causes the CHG FET to be disabled whenever a fault is determined that would cause the DSG FET to be disabled. After a time given by Recovery is completed OR if the load is removed (as determined by the LOAD_PRESENT signal from the bq769x0), the CHG and DSG FETs are turned back on.
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Page 13: Revision History
Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. DATE REVISION NOTES February 2018 Initial Release SLUUBM6 – March 2018 Revision History Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated... - Page 14 IMPORTANT NOTICE FOR TI DESIGN INFORMATION AND RESOURCES Texas Instruments Incorporated (‘TI”) technical, application or other design advice, services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to assist designers who are developing applications that incorporate TI products;...