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SYMBOL
Burst mode standby (pin 3)
V
burst mode standby active threshold
th(burst)(on)
voltage
I
burst mode standby active current
th(burst)(on)
I
burst mode standby inactive current
th(burst)(off)
t
burst mode standby blanking time
(burst-blank)
Valley switch (pin 8)
∆V/∆t
∆V/∆t for valley recognition
valley
t
delay from valley recognition to switch-on
valley-swon
Current and short winding protection (pin 5)
V
maximum source voltage OCP
sense(max)
t
delay from detecting V
propagation
switch-off
V
short winding protection voltage
swp
t
blanking time for current and short
leb
winding protection
I
soft start current
ss
Overvoltage protection (pin 4)
I
OVP protection level at pin 4, set by the
(OVP)(DEM)
demagnetization resistor R
Section "OverVoltage Protection (OVP)"
Overpower protection (pin 4)
I
OPP current at pin 4, start of OPP
(OPP)(DEM)
correction. Set by the demagnetization
resistor R
Protection (OPP)"
I
OPP current at pin 4 where maximum
(OPP50%)(DEM)
source voltage is limited to 0.3 V
Driver (pin 6)
I
source current capability of driver
source
I
sink current capability of driver
sink
V
maximum output voltage of the driver
o(driver)(max)
Temperature protection
T
maximum temperature threshold
prot(max)
T
hysteresis temperature
prot(hyst)
Note
1. Guaranteed by design.
PARAMETER
to
sense(max)
; see
DEM
; see Section "OverPower
DEM
CONDITIONS
at I
= 6 mA
burst
∆V/∆t = 0.1 V/µs
∆V/∆t = 0.5 V/µs
V
< 0.5 V
sense
= 2 V −
V
= 9.5 V; V
CC
DRIVER
V
= 9.5 V; V
= 2 V
CC
DRIVER
V
= 9.5 V;
CC
V
= 9.5 V
DRIVER
V
> 12 V
CC
-:+
MIN.
TYP. MAX. UNIT
3.3
3.8
4.3
V
−
−
16
mA
−
−
6
mA
µs
25
30
35
−85
−
+85
V/µs
−
−
(1)
150
ns
0.48
0.52
0.56
V
−
140
185
ns
0.83
0.88
0.96
V
300
370
440
ns
µA
45
60
75
µA
54
60
66
−
−24
−
µA
−
−100
−
µA
−170
−88
mA
−
−
300
mA
−
400
700
mA
−
11.5
12
V
°C
130
140
150
−
−
°C
(1)
8
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