CIRCUIT DESCRIPTION
3-2-5 DRAM CONTROL
1) DEVICE
TYPE NO..................................K4E6411D EDO TYPE
CAPACITY................................4MBYTES (1M*16BITS*2)
2) OPERATING PRINCIPLE
DRAM can either read or write. The data can be stored in the DRAM only when the power is on. It stores data white the CPU
processes data. The address to read and write the data is specified by RAS SIGNAL and CAS SIGNAL. DRAMWE*SIGNAL
is activated when writing data and DRAMOE*SIGNAL, when reading. You can expand up to 64MBYTE of DRAM in this sys-
tem.
bank3 Next
bank3 Bas e
bank2 Next
bank2 Bas e
bank1 Next
bank1 Bas e
bank0 Next
bank0 Bas e
Repair Manual
3-12
<DRAM Bank Configuration>
0xf f f f f f f
0x0000000
Samsung Electronics